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http://hdl.handle.net/2261/40
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| タイトル: | EFFECTS OF ALUMINUM OVER-LAYER THICKNESS ON CHARACTERISTICS OF NIOBIUM TUNNEL-JUNCTIONS FABRICATED BY DC MAGNETRON SPUTTERING |
| 著者: | Nakayama, Akiyoshi
Nagashima, Haruo
Shimada, Junichi
Okabe, Yoichi |
| 著者(別言語): | 岡部, 洋一
中山, 明芳 |
| キーワード: | JOSEPHSON |
| Issue Date: | Jun-1995 |
| 出版者: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 掲載誌情報: | IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY 5 (2): 2299-2302 Part 3 |
| 抄録: | We have fabricated Nb/AlOX/Nb Josephson tunnel junctions using a sputtering apparatus with a load-lock system. The junctions that had 50 mu m x 50 mu m area showed a V-m value (the product of the critical current and the subgap resistance at 2 mV) as high as 50 mV at a current density of 160 A/cm(2). Moreover, junctions having different thicknesses of the Al over-layer were concurrently fabricated on one wafer to study the dependence of the current-voltage characteristics on this Al over-layer. The I-V characteristics were also calculated by McMillan's tunneling model and were compared with the measured I-V characteristics. |
| URI: | http://hdl.handle.net/2261/40 |
| ISSN: | 10518223 |
| Appears in Collections: | 16610 学術雑誌論文
015 技術・工学
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