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http://hdl.handle.net/2261/41
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| タイトル: | FABRICATION OF FIELD-EFFECT DEVICES BASED ON YBACUO/PRBACUO/YBACUO JUNCTIONS |
| 著者: | Kimura, Hiroshi
Okabe, Yoichi
Kamijo, Hiroshi |
| 著者(別言語): | 岡部, 洋一
木村, 浩 |
| キーワード: | JOSEPHSON |
| Issue Date: | Jun-1995 |
| 出版者: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 掲載誌情報: | IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY 5 (2): 2616-2619 Part 3 |
| 抄録: | In order to investigate an electric field effect in the junction, the three terminal device was fabricated. When the gate voltage of +2V (E=7x10(4) V/cm) was applied, the drain-source resistance decreased above the temperature of 100K. However, the electric field effect could not be observed below the temperature of 100K. Above the temperature of 100K, it is found that the CuO chain in PBCO behaved itself as a doped semiconductor (acceptor level = 26.5 meV). |
| URI: | http://hdl.handle.net/2261/41 |
| ISSN: | 10518223 |
| Appears in Collections: | 16610 学術雑誌論文
015 技術・工学
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