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タイトル: HIGH-FREQUENCY PROPERTIES OF ALL-NBN NANOBRIDGES WITH GAP STRUCTURE IN IV CURVES
著者: Hamasaki, K
Yakihara, I
Wang, Z
Yamashita, T
Okabe, Yoichi
著者(別言語): 岡部, 洋一
発行日: 1987年3月
出版者: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
掲載誌情報: IEEE TRANSACTIONS ON MAGNETICS 23 (2): 1489-1492
抄録: All-NbN nanobridges with gap structure in I-V curves have been reproducibly constructed using RIE and lift-off techniques. The nanobridges had a width of 2 Dm, and a thickness of<30 nm. The length of nanobridge was about of the order of 3 to 5 coherence length of epitaxial NbN films. The nanobridges had nearly ideal characteristics: sharply defined critical current, high resistance, well-defined gap structure at about 4 mV, large IcRn products of -3 mV, and low excess current. Small-area dc SQUIDs were made using the nanobridges, and anaIys&s of the response to magnetic flux were perforaed. The current-phase relationship of the nanobridges was found t o be close to sinusoidal. The maximum LC resonant voltage was about 1.2 mu, corresponding to a frequency of 580 GHz. The I F peak was obtained up to the bias voltage of about 4 mV in 101 GHz Josephson mixing.
URI: http://hdl.handle.net/2261/49
ISSN: 00189464
出現カテゴリ:015 技術・工学
16610 学術雑誌論文

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