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http://hdl.handle.net/2261/53
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| タイトル: | ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING |
| 著者: | Akiyama, Tatsuo
Ujihiar, Yusuke
Okabe, Yoichi
Sugano, Takuo
Niki, Eiji |
| 著者(別言語): | 岡部, 洋一 |
| Issue Date: | May-1982 |
| 出版者: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 掲載誌情報: | IEEE TRANSACTIONS ON ELECTRON DEVICES 29 (12): 1936-1941 |
| 抄録: | Ion-sensitive fieldeffect transistors (ISFET’s) have been
fabricated by using silicon fiims on sapphire substrates (SOS). Using
this structure Si02, Zr02, and TazO5 films are examined as hydrogenion-
sensitive materials, and TazO5 fiim has been found to have the highest
pH sensitivity (56 mV/pH) among them. The measured pH sensitivity
of this SOS-ISFET’s is compared with the theoretical sensitivity
based on the site-binding model of proton dimciation reaction on the
metal oxide f i i and good agreement between them is obtained. |
| URI: | http://hdl.handle.net/2261/53 |
| ISSN: | 00189383 |
| Appears in Collections: | 16610 学術雑誌論文
015 技術・工学
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