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タイトル: Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
著者: Muneta, Iriya
Kanaki, Toshiki
Ohya, Shinobu
Tanaka, Masaaki
発行日: 2017年5月22日
出版者: Nature Publishing Group
掲載誌情報: Iriya Muneta, Toshiki Kanaki, Shinobu Ohya, and Masaaki Tanaka, "Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet", Nature Communications Online Edition: 2017/05/22 (Japan time), doi:10.1038/ncomms15387.
関連URI: http://www.u-tokyo.ac.jp/ja/utokyo-research/research-news/pioneering-new-methods-for-designing-magnetism.html
抄録: A major issue in the development of spintronic memory devices is the reduction of the power consumption for the magnetization reversal. For this purpose, the artificial control of the magnetic anisotropy of ferromagnetic materials is of great importance. Here, we demonstrate the control of the carrier-energy dependence of the magnetic anisotropy of the density of states (DOS) using the quantum size effect in a single-crystal ferromagnetic material, GaMnAs. We show that the mainly twofold symmetry of the magnetic anisotropy of DOS, which is attributed to the impurity band, is changed to a fourfold symmetry by enhancing the quantum size effect in the valence band of the GaMnAs quantum wells. By combination with the gate electric-field control technique, our concept of the usage of the quantum size effect for the control of the magnetism will pave the way for the ultra-low-power manipulation of magnetization in future spintronic devices.
内容記述: UTokyo Research掲載「磁性をデザインする新たな手法を開拓」 URI: http://www.u-tokyo.ac.jp/ja/utokyo-research/research-news/pioneering-new-methods-for-designing-magnetism.html
UTokyo Research "Pioneering new methods for designing magnetism" URI: http://www.u-tokyo.ac.jp/en/utokyo-research/research-news/pioneering-new-methods-for-designing-magnetism.html
URI: http://hdl.handle.net/2261/72647
ISSN: 2041-1723
出現カテゴリ:014 自然科学
1132210 学術雑誌論文


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