WEKO3
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Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms
http://hdl.handle.net/2261/18
http://hdl.handle.net/2261/18f13fe070-d501-4600-ab03-6046f73c8827
名前 / ファイル | ライセンス | アクション |
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2003JVSTB_li.pdf (1.1 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-02-06 | |||||
タイトル | ||||||
タイトル | Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題 | Titanium nitride | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Nanofilms | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Nanostructured materials | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Thin films | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Epitaxial growth | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Interfacial energy | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Crystal orientation | |||||
主題Scheme | Other | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Li, Tu-Qiang
× Li, Tu-Qiang× Noda, Suguru× Okada, Fumio× Komiyama, Hiroshi |
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著者別名 | ||||||
識別子 | 26 | |||||
識別子Scheme | WEKO | |||||
姓名 | 野田, 優 | |||||
著者別名 | ||||||
識別子 | 27 | |||||
識別子Scheme | WEKO | |||||
姓名 | 岡田, 文雄 | |||||
著者別名 | ||||||
識別子 | 28 | |||||
識別子Scheme | WEKO | |||||
姓名 | 小宮山, 宏 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The effects of substrate heating and substrate biasing on the initial stage of nonepitaxial heterogeneous growth of TiN on Si(111) was studied by using high-resolution transmission electron microscopy. Although TiN films deposited at room temperature (RT) undergo a transition from continuous amorphous films to polycrystalline films with three-dimensional grains when the film thickness is increased from ~1 to 2 nm, crystallization occurred at a substrate temperature, T/sub s/=570 K, even for film thicknesses less than 1 nm. Compared with growth at T/sub s/=RT, at T/sub s/=570 K, the initial lateral grain size was only slightly larger, and the grains tended to be spherical and discontinuous at higher film thickness. At a substrate bias voltage, V/sub b/=-70 V, the grains were laterally larger and planar. At a film thickness of 50 nm, the films deposited at V/sub b/=-70 V showed the thermodynamically favored (200) preferred orientation, whereas the films deposited at T/sub s/=570 K showed (111) preferred orientation with a weak (200) peak. | |||||
書誌情報 |
Journal of vacuum science & technology. Second series. B, Microelectronics and nanometer structures, processing, measurement and phenomena 巻 21, 号 6, p. 2512-2516, 発行日 2003-11 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0734211X | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10804928 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
日本十進分類法 | ||||||
主題 | 431.86 | |||||
主題Scheme | NDC | |||||
出版者 | ||||||
出版者 | American Institute of Physics |