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First-principle calculations on the electronic structure at metal silicide/Si interfaces
https://doi.org/10.11501/3082119
https://doi.org/10.11501/3082119a75f260a-20e1-4fb3-a8ca-6b0295ff44c0
名前 / ファイル | ライセンス | アクション |
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284025.pdf (6.1 MB)
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Item type | 学位論文 / Thesis or Dissertation(1) | |||||
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公開日 | 2012-03-01 | |||||
タイトル | ||||||
タイトル | First-principle calculations on the electronic structure at metal silicide/Si interfaces | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_46ec | |||||
タイプ | thesis | |||||
ID登録 | ||||||
ID登録 | 10.11501/3082119 | |||||
ID登録タイプ | JaLC | |||||
その他のタイトル | ||||||
その他のタイトル | 金属シリサイド/シリコン界面に於ける電子構造の理論的研究 | |||||
著者 |
Fujitani, Hideaki
× Fujitani, Hideaki |
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著者別名 | ||||||
識別子 | 7568 | |||||
識別子Scheme | WEKO | |||||
姓名 | 藤谷, 秀章 | |||||
書誌情報 | 発行日 1993-12-20 | |||||
学位名 | ||||||
学位名 | 博士(理学) | |||||
学位 | ||||||
値 | doctoral | |||||
学位分野 | ||||||
Science (Rigaku)(理学) | ||||||
学位授与機関 | ||||||
学位授与機関名 | University of Tokyo (東京大学) | |||||
研究科・専攻 | ||||||
Graduate School of Science (理学系研究科) | ||||||
学位授与年月日 | ||||||
学位授与年月日 | 1993-12-20 | |||||
学位授与番号 | ||||||
学位授与番号 | 乙第11531号 | |||||
学位記番号 | ||||||
第11531号 |