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Ge(001)基板上へのInGaAsN薄膜のMOVPE成長(要旨)
http://hdl.handle.net/2261/48809
http://hdl.handle.net/2261/4880976c66a6d-6b7f-4260-bf93-17d45fa43918
名前 / ファイル | ライセンス | アクション |
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要旨(summary) (391.7 kB)
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Item type | 学位論文 / Thesis or Dissertation(1) | |||||
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公開日 | 2012-10-12 | |||||
タイトル | ||||||
タイトル | Ge(001)基板上へのInGaAsN薄膜のMOVPE成長(要旨) | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題 | MOVPE | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | InGaAsN | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Ge基板 | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | 太陽電池 | |||||
主題Scheme | Other | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_46ec | |||||
タイプ | thesis | |||||
著者 |
菊地, 健彦
× 菊地, 健彦 |
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著者別名 | ||||||
識別子 | 8634 | |||||
識別子Scheme | WEKO | |||||
姓名 | キクチ, タケヒコ | |||||
著者所属 | ||||||
著者所属 | 東京大学大学院新領域創成科学研究科基盤科学研究系物質系専攻 | |||||
著者所属 | ||||||
著者所属 | Department of Adcanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo | |||||
書誌情報 | 発行日 2011-03-24 | |||||
日本十進分類法 | ||||||
主題 | 428 | |||||
主題Scheme | NDC | |||||
学位名 | ||||||
学位名 | 修士(科学) | |||||
学位 | ||||||
値 | master | |||||
研究科・専攻 | ||||||
新領域創成科学研究科基盤科学研究系物質系専攻 | ||||||
学位授与年月日 | ||||||
学位授与年月日 | 2011-03-24 | |||||
学位記番号 | ||||||
修創域第3671号 |