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Spectroscopic study of Si-based semiconductor heterostructures grown by molecular beam epitaxy
https://doi.org/10.11501/3158606
https://doi.org/10.11501/3158606fceaf831-4675-45a3-a77d-778f04f56e39
名前 / ファイル | ライセンス | アクション |
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343798.pdf (18.6 MB)
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Item type | 学位論文 / Thesis or Dissertation(1) | |||||
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公開日 | 2013-04-25 | |||||
タイトル | ||||||
タイトル | Spectroscopic study of Si-based semiconductor heterostructures grown by molecular beam epitaxy | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_46ec | |||||
タイプ | thesis | |||||
ID登録 | ||||||
ID登録 | 10.11501/3158606 | |||||
ID登録タイプ | JaLC | |||||
その他のタイトル | ||||||
その他のタイトル | 分子線エピタキシ-法により作製したSi系ヘテロ構造の分光学的研究 | |||||
著者 |
Usami, Noritaka
× Usami, Noritaka |
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著者別名 | ||||||
識別子 | 10407 | |||||
識別子Scheme | WEKO | |||||
姓名 | 宇佐美, 徳隆 | |||||
書誌情報 | 発行日 1998-01-29 | |||||
学位名 | ||||||
学位名 | 博士(工学) | |||||
学位 | ||||||
値 | doctoral | |||||
学位分野 | ||||||
Engineering(工学) | ||||||
学位授与機関 | ||||||
学位授与機関名 | University of Tokyo (東京大学) | |||||
研究科・専攻 | ||||||
Department of Physical engineering, Graduate School of Engineering(工学系研究科物理工学専攻) | ||||||
学位授与年月日 | ||||||
学位授与年月日 | 1998-01-29 | |||||
学位授与番号 | ||||||
学位授与番号 | 乙第13671号 | |||||
学位記番号 | ||||||
第13671号 |