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Fabrication and characterization of 1.2-eV InGaAs/GaAsN multiple quantum well with flattened conduction band structure for multi-junction solar cell applications
http://hdl.handle.net/2261/00078039
http://hdl.handle.net/2261/000780391764926d-45df-485e-85f1-bff7b3e8d571
Item type | 学位論文 / Thesis or Dissertation(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2019-09-19 | |||||
タイトル | ||||||
タイトル | Fabrication and characterization of 1.2-eV InGaAs/GaAsN multiple quantum well with flattened conduction band structure for multi-junction solar cell applications | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_46ec | |||||
タイプ | thesis | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
その他のタイトル | ||||||
その他のタイトル | 多接合太陽電池応用に向けた平滑化伝導帯構造を有する1.2eV InGaAs/GaAsN多重量子井戸の作製と評価 | |||||
著者 |
YANWACHIRAKUL, WARAKORN
× YANWACHIRAKUL, WARAKORN |
|||||
著者別名 | ||||||
識別子 | 157607 | |||||
識別子Scheme | WEKO | |||||
姓名 | ヤンワチラークン, ワラーコン | |||||
著者所属 | ||||||
著者所属 | 工学系研究科電気系工学専攻 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 学位の種別: 課程博士 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 審査委員会委員 : (主査)東京大学教授 中野 義昭, 東京大学教授 岡田 至崇, 東京大学教授 杉山 正和, 東京大学准教授 種村 拓夫, 東京大学特任准教授 アーサンナズム | |||||
書誌情報 | 発行日 2018-03-22 | |||||
著者版フラグ | ||||||
値 | none | |||||
学位名 | ||||||
学位名 | 博士(工学) | |||||
学位 | ||||||
値 | doctoral | |||||
学位授与機関 | ||||||
学位授与機関名 | University of Tokyo(東京大学) | |||||
研究科・専攻 | ||||||
Department of Electrical Engineering and Information Systems, Graduate School of Engineering (工学系研究科電気系工学専攻) | ||||||
学位授与年月日 | ||||||
学位授与年月日 | 2018-03-22 | |||||
学位授与番号 | ||||||
学位授与番号 | 12601甲第34741号 | |||||
学位記番号 | ||||||
博工第9265号 |