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Reduction of Dislocations in Gallium Nitride Grown by Metal Organic Vapor Phase Epitaxy using novel Seed layers and Controlled Nucleation
https://doi.org/10.15083/00007813
https://doi.org/10.15083/0000781304ac005a-f682-44ed-a383-b1256891b2fa
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A31048_summary.pdf (223.7 kB)
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A31048_abstract.pdf (76.5 kB)
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A31048_review.pdf (269.4 kB)
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Item type | 学位論文 / Thesis or Dissertation(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2016-08-01 | |||||
タイトル | ||||||
タイトル | Reduction of Dislocations in Gallium Nitride Grown by Metal Organic Vapor Phase Epitaxy using novel Seed layers and Controlled Nucleation | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_46ec | |||||
タイプ | thesis | |||||
ID登録 | ||||||
ID登録 | 10.15083/00007813 | |||||
ID登録タイプ | JaLC | |||||
その他のタイトル | ||||||
その他のタイトル | 新規シード層と核発生制御による有機金属気相成長GaNの転位低減 | |||||
著者 |
王, 宏波
× 王, 宏波 |
|||||
著者別名 | ||||||
識別子 | 140648 | |||||
識別子Scheme | WEKO | |||||
姓名 | Wang, Hongbo | |||||
著者所属 | ||||||
著者所属 | 工学系研究科先端学際工学専攻 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 学位の種別: 課程博士 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 審査委員会委員 : (主査)東京大学教授 中野 義昭, 東京大学教授 岡田 至崇, 東京大学准教授 野口 祐二, 東京大学准教授 杉山 正和, 東京大学准教授 種村 拓夫 | |||||
書誌情報 | 発行日 2014-09-26 | |||||
著者版フラグ | ||||||
値 | none | |||||
学位名 | ||||||
学位名 | 博士(工学) | |||||
学位 | ||||||
値 | doctoral | |||||
学位授与機関 | ||||||
学位授与機関名 | University of Tokyo(東京大学) | |||||
研究科・専攻 | ||||||
Department of Advanced Interdisciplinary Studies, Graduate School of Engineering (工学系研究科先端学際工学専攻) | ||||||
学位授与年月日 | ||||||
学位授与年月日 | 2014-09-26 | |||||
学位授与番号 | ||||||
学位授与番号 | 12601甲第31048号 | |||||
学位記番号 | ||||||
博工第8438号 |