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Mechanism of Stress-Induced Migration in Metal Interconnections on Semiconductor Devices
https://doi.org/10.11501/3162366
https://doi.org/10.11501/31623664224ef41-f94c-4245-a986-aaf6cc1a2266
名前 / ファイル | ライセンス | アクション |
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113850.pdf (7.7 MB)
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Item type | 学位論文 / Thesis or Dissertation(1) | |||||
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公開日 | 2017-01-13 | |||||
タイトル | ||||||
タイトル | Mechanism of Stress-Induced Migration in Metal Interconnections on Semiconductor Devices | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題 | Stress-Induced Migration | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | ストレスマイグレーション | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | 長期信頼性 | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | 半導体集積回路 | |||||
主題Scheme | Other | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_46ec | |||||
タイプ | thesis | |||||
ID登録 | ||||||
ID登録 | 10.11501/3162366 | |||||
ID登録タイプ | JaLC | |||||
その他のタイトル | ||||||
その他のタイトル | 半導体デバイスに使用される金属配線におけるストレスマイグレーションのメカニズムに関する研究 | |||||
著者 |
Aoyagi, Minoru
× Aoyagi, Minoru |
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著者別名 | ||||||
識別子 | 17729 | |||||
識別子Scheme | WEKO | |||||
姓名 | 青柳, 稔 | |||||
書誌情報 | 発行日 1998-09-30 | |||||
日本十進分類法 | ||||||
主題 | 549.8 | |||||
主題Scheme | NDC | |||||
学位名 | ||||||
学位名 | 博士(工学) | |||||
学位 | ||||||
値 | doctoral | |||||
学位分野 | ||||||
Engineering (工学) | ||||||
学位授与機関 | ||||||
学位授与機関名 | University of Tokyo (東京大学) | |||||
研究科・専攻 | ||||||
Department of Information and Communication Engineering, Graduate School of Engineering (工学系研究科電子情報工学専攻) | ||||||
学位授与年月日 | ||||||
学位授与年月日 | 1998-09-30 | |||||
学位授与番号 | ||||||
学位授与番号 | 甲第13850号 | |||||
学位記番号 | ||||||
博工第4247号 |