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2022-12-19T03:40:55Z
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Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms
Li, Tu-Qiang
22
Noda, Suguru
23
Okada, Fumio
24
Komiyama, Hiroshi
25
431.86
Titanium nitride
Nanofilms
Nanostructured materials
Thin films
Epitaxial growth
Interfacial energy
Crystal orientation
application/pdf
The effects of substrate heating and substrate biasing on the initial stage of nonepitaxial heterogeneous growth of TiN on Si(111) was studied by using high-resolution transmission electron microscopy. Although TiN films deposited at room temperature (RT) undergo a transition from continuous amorphous films to polycrystalline films with three-dimensional grains when the film thickness is increased from ~1 to 2 nm, crystallization occurred at a substrate temperature, T/sub s/=570 K, even for film thicknesses less than 1 nm. Compared with growth at T/sub s/=RT, at T/sub s/=570 K, the initial lateral grain size was only slightly larger, and the grains tended to be spherical and discontinuous at higher film thickness. At a substrate bias voltage, V/sub b/=-70 V, the grains were laterally larger and planar. At a film thickness of 50 nm, the films deposited at V/sub b/=-70 V showed the thermodynamically favored (200) preferred orientation, whereas the films deposited at T/sub s/=570 K showed (111) preferred orientation with a weak (200) peak.
journal article
American Institute of Physics
2003-11
application/pdf
Journal of vacuum science & technology. Second series. B, Microelectronics and nanometer structures, processing, measurement and phenomena
6
21
2512
2516
AA10804928
0734211X
https://repository.dl.itc.u-tokyo.ac.jp/record/10/files/2003JVSTB_li.pdf
eng