2024-03-28T20:47:29Z
https://repository.dl.itc.u-tokyo.ac.jp/oai
oai:repository.dl.itc.u-tokyo.ac.jp:00001966
2022-12-19T04:58:09Z
6:209:271
9:233:234
Suppression of n-GaAs MOS interface state density by the development of novel in situ passivation with MOVPE
MOVPE法における新規in situパッシベーションの開発によるn-GaAs MOSの界面準位低減
寺田, 雄紀
5863
540
修士(工学)
thesis
2010-03-24
2010-03-24
application/pdf
https://repository.dl.itc.u-tokyo.ac.jp/record/1966/files/37086499.pdf
jpn