2024-03-28T12:21:47Z
https://repository.dl.itc.u-tokyo.ac.jp/oai
oai:repository.dl.itc.u-tokyo.ac.jp:00002234
2022-12-19T03:43:50Z
6:260:318
9:233:280
III-V族希薄磁性半導体GaMnAsおよびGaMnAsベース・ヘテロ構造の基本物性研究
Study of the fundamental properties of Ⅲ-Ⅴ based diluted magnetic semiconductor GaMnAs and its related heterostructures
Hayashi, Toshiaki
6369
549.8
半導体
University of Tokyo (東京大学)
博士(工学)
thesis
2000-03-29
2000-03-29
application/pdf
甲第15151号
https://repository.dl.itc.u-tokyo.ac.jp/record/2234/files/115151.pdf
eng