{"created":"2021-03-01T06:16:32.710795+00:00","id":10,"links":{},"metadata":{"_buckets":{"deposit":"298276e7-ea75-4ff4-a4cc-c953ab3905eb"},"_deposit":{"id":"10","owners":[],"pid":{"revision_id":0,"type":"depid","value":"10"},"status":"published"},"_oai":{"id":"oai:repository.dl.itc.u-tokyo.ac.jp:00000010","sets":["6:7:8","9:10:11"]},"item_2_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-11","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"2516","bibliographicPageStart":"2512","bibliographicVolumeNumber":"21","bibliographic_titles":[{"bibliographic_title":"Journal of vacuum science & technology. Second series. B, Microelectronics and nanometer structures, processing, measurement and phenomena"}]}]},"item_2_description_13":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_2_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The effects of substrate heating and substrate biasing on the initial stage of nonepitaxial heterogeneous growth of TiN on Si(111) was studied by using high-resolution transmission electron microscopy. Although TiN films deposited at room temperature (RT) undergo a transition from continuous amorphous films to polycrystalline films with three-dimensional grains when the film thickness is increased from ~1 to 2 nm, crystallization occurred at a substrate temperature, T/sub s/=570 K, even for film thicknesses less than 1 nm. Compared with growth at T/sub s/=RT, at T/sub s/=570 K, the initial lateral grain size was only slightly larger, and the grains tended to be spherical and discontinuous at higher film thickness. At a substrate bias voltage, V/sub b/=-70 V, the grains were laterally larger and planar. At a film thickness of 50 nm, the films deposited at V/sub b/=-70 V showed the thermodynamically favored (200) preferred orientation, whereas the films deposited at T/sub s/=570 K showed (111) preferred orientation with a weak (200) peak.","subitem_description_type":"Abstract"}]},"item_2_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"26","nameIdentifierScheme":"WEKO"}],"names":[{"name":"野田, 優"}]},{"nameIdentifiers":[{"nameIdentifier":"27","nameIdentifierScheme":"WEKO"}],"names":[{"name":"岡田, 文雄"}]},{"nameIdentifiers":[{"nameIdentifier":"28","nameIdentifierScheme":"WEKO"}],"names":[{"name":"小宮山, 宏"}]}]},"item_2_publisher_20":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_2_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA10804928","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0734211X","subitem_source_identifier_type":"ISSN"}]},"item_2_subject_15":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"431.86","subitem_subject_scheme":"NDC"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Li, Tu-Qiang"}],"nameIdentifiers":[{"nameIdentifier":"22","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Noda, Suguru"}],"nameIdentifiers":[{"nameIdentifier":"23","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Okada, Fumio"}],"nameIdentifiers":[{"nameIdentifier":"24","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Komiyama, Hiroshi"}],"nameIdentifiers":[{"nameIdentifier":"25","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-05-30"}],"displaytype":"detail","filename":"2003JVSTB_li.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"2003JVSTB_li.pdf","url":"https://repository.dl.itc.u-tokyo.ac.jp/record/10/files/2003JVSTB_li.pdf"},"version_id":"1e1c61cf-0782-4f69-a0b6-16edf27a73a9"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Titanium nitride","subitem_subject_scheme":"Other"},{"subitem_subject":"Nanofilms","subitem_subject_scheme":"Other"},{"subitem_subject":"Nanostructured materials","subitem_subject_scheme":"Other"},{"subitem_subject":"Thin films","subitem_subject_scheme":"Other"},{"subitem_subject":"Epitaxial growth","subitem_subject_scheme":"Other"},{"subitem_subject":"Interfacial energy","subitem_subject_scheme":"Other"},{"subitem_subject":"Crystal orientation","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms"}]},"item_type_id":"2","owner":"1","path":["11","8"],"pubdate":{"attribute_name":"公開日","attribute_value":"2006-02-06"},"publish_date":"2006-02-06","publish_status":"0","recid":"10","relation_version_is_last":true,"title":["Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms"],"weko_creator_id":"1","weko_shared_id":2},"updated":"2022-12-19T03:40:55.371679+00:00"}