{"created":"2021-03-01T06:16:32.829843+00:00","id":12,"links":{},"metadata":{"_buckets":{"deposit":"10cd7c89-9a6f-4bf5-96a9-7040ddf11874"},"_deposit":{"id":"12","owners":[],"pid":{"revision_id":0,"type":"depid","value":"12"},"status":"published"},"_oai":{"id":"oai:repository.dl.itc.u-tokyo.ac.jp:00000012","sets":["6:7:8","9:10:11"]},"item_2_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-09","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"1723","bibliographicPageStart":"1717","bibliographicVolumeNumber":"21","bibliographic_titles":[{"bibliographic_title":"Journal of vacuum science & technology. 2nd series. A, Vacuum, surfaces, and films : an official journal of the American Vacuum Society"}]}]},"item_2_description_13":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_2_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron dc sputtering onto (111)-oriented Si substrates was investigated by using high-resolution transmission electron microscopy (HRTEM). During the initial growth stage, a continuous amorphous layer was observed when the deposited film was less than 1 nm thick. Crystal nucleation occurred from the amorphous layer when the film grew to about 2 nm thick. No preferred orientation was found for the initial crystal nuclei. The growth of the crystal grains depended on the N/sub 2/ partial pressure, P/sub N2/. Increasing P/sub N2/ from 0.047 to 0.47 Pa enhanced lateral grain growth and coalescence between grains. For P/sub N2/=0.47 Pa, planar grains with a large lateral dimension were found formed by grain growth and coalescence, inducing a (200) film orientation. For films formed at P/sub N2/=0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate, and was indicated to be primarily SiN/sub x/ by x-ray photoelectron spectroscopy and HRTEM. This interlayer was less than 0.5 nm thick in films formed at P/sub N2/=0.047 Pa","subitem_description_type":"Abstract"}]},"item_2_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"43","nameIdentifierScheme":"WEKO"}],"names":[{"name":"野田, 優"}]},{"nameIdentifiers":[{"nameIdentifier":"44","nameIdentifierScheme":"WEKO"}],"names":[{"name":"小宮山, 宏"}]},{"nameIdentifiers":[{"nameIdentifier":"45","nameIdentifierScheme":"WEKO"}],"names":[{"name":"山本, 剛久"}]},{"nameIdentifiers":[{"nameIdentifier":"46","nameIdentifierScheme":"WEKO"}],"names":[{"name":"幾原, 雄一"}]}]},"item_2_publisher_20":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_2_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA10635514","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"07342101","subitem_source_identifier_type":"ISSN"}]},"item_2_subject_15":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"431.86","subitem_subject_scheme":"NDC"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Li, Tu-Qiang"}],"nameIdentifiers":[{"nameIdentifier":"38","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Noda, Suguru"}],"nameIdentifiers":[{"nameIdentifier":"39","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Komiyama, Hiroshi"}],"nameIdentifiers":[{"nameIdentifier":"40","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamamoto, Takahisa"}],"nameIdentifiers":[{"nameIdentifier":"41","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ikuhara, Yuichi"}],"nameIdentifiers":[{"nameIdentifier":"42","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-05-30"}],"displaytype":"detail","filename":"2003JVSTA_li.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"2003JVSTA_li.pdf","url":"https://repository.dl.itc.u-tokyo.ac.jp/record/12/files/2003JVSTA_li.pdf"},"version_id":"80a6c23d-d7b7-4cd9-aa45-6965188ed809"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Titanium nitride","subitem_subject_scheme":"Other"},{"subitem_subject":"Magnetron sputtering","subitem_subject_scheme":"Other"},{"subitem_subject":"Silicon","subitem_subject_scheme":"Other"},{"subitem_subject":"Partial pressure","subitem_subject_scheme":"Other"},{"subitem_subject":"Crystals","subitem_subject_scheme":"Other"},{"subitem_subject":"Crystal growth","subitem_subject_scheme":"Other"},{"subitem_subject":"Amorphous materials","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation"}]},"item_type_id":"2","owner":"1","path":["11","8"],"pubdate":{"attribute_name":"公開日","attribute_value":"2006-02-06"},"publish_date":"2006-02-06","publish_status":"0","recid":"12","relation_version_is_last":true,"title":["Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation"],"weko_creator_id":"1","weko_shared_id":2},"updated":"2022-12-19T03:40:55.778391+00:00"}