{"created":"2021-03-01T06:16:32.890571+00:00","id":13,"links":{},"metadata":{"_buckets":{"deposit":"63eb6993-2c9c-4ace-b8ae-499d1e0ac23c"},"_deposit":{"id":"13","owners":[],"pid":{"revision_id":0,"type":"depid","value":"13"},"status":"published"},"_oai":{"id":"oai:repository.dl.itc.u-tokyo.ac.jp:00000013","sets":["6:7:8","9:10:11"]},"item_2_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-09-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"3497","bibliographicPageStart":"3492","bibliographicVolumeNumber":"94","bibliographic_titles":[{"bibliographic_title":"Journal of applied physics"}]}]},"item_2_description_13":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_2_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The structure and morphology of nanosized Cu islands grown by sputter deposition on clean SiO2 substrates and Ti-underlayered SiO2 substrates are investigated using transmission electron microscopy. On SiO2, spherical Cu islands with a random crystalline orientation are formed, whereas on Ti/SiO2, semispherical islands with a preferred <111> crystalline orientation are formed. Moreover, the Cu islands on Ti/SiO2 have smaller sizes, shorter interisland distances, and a higher number density than those on SiO2. These structural and morphological changes at the nanoscale are discussed from the viewpoint of interfacial interactions. Our study suggests that by using an appropriate metal underlayer, it is possible to fabricate nanosized islands with the desired wettability, crystalline orientation, as well as morphology of island ensembles.","subitem_description_type":"Abstract"}]},"item_2_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"52","nameIdentifierScheme":"WEKO"}],"names":[{"name":"野田, 優"}]},{"nameIdentifiers":[{"nameIdentifier":"53","nameIdentifierScheme":"WEKO"}],"names":[{"name":"大久保, 達也"}]},{"nameIdentifiers":[{"nameIdentifier":"54","nameIdentifierScheme":"WEKO"}],"names":[{"name":"山口, 由岐夫"}]},{"nameIdentifiers":[{"nameIdentifier":"55","nameIdentifierScheme":"WEKO"}],"names":[{"name":"小宮山, 宏"}]}]},"item_2_publisher_20":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_2_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_2_subject_15":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"436.17","subitem_subject_scheme":"NDC"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hu, Minghui"}],"nameIdentifiers":[{"nameIdentifier":"47","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Noda, Suguru"}],"nameIdentifiers":[{"nameIdentifier":"48","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Okubo, Tatsuya"}],"nameIdentifiers":[{"nameIdentifier":"49","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamaguchi, Yukio"}],"nameIdentifiers":[{"nameIdentifier":"50","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Komiyama, Hiroshi"}],"nameIdentifiers":[{"nameIdentifier":"51","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-05-30"}],"displaytype":"detail","filename":"2003JAP_hu2.pdf","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"2003JAP_hu2.pdf","url":"https://repository.dl.itc.u-tokyo.ac.jp/record/13/files/2003JAP_hu2.pdf"},"version_id":"fadfcecb-7931-43c1-8ef0-c87fec0916fb"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"copper","subitem_subject_scheme":"Other"},{"subitem_subject":"Nanostructured materials","subitem_subject_scheme":"Other"},{"subitem_subject":"Silica","subitem_subject_scheme":"Other"},{"subitem_subject":"Wetting","subitem_subject_scheme":"Other"},{"subitem_subject":"Crystal orientation","subitem_subject_scheme":"Other"},{"subitem_subject":"Transmission electron microscopy","subitem_subject_scheme":"Other"},{"subitem_subject":"Morphological control","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Structural and morphological control of nanosized Cu islands on SiO2 using a Ti underlayer","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Structural and morphological control of nanosized Cu islands on SiO2 using a Ti underlayer"}]},"item_type_id":"2","owner":"1","path":["11","8"],"pubdate":{"attribute_name":"公開日","attribute_value":"2006-02-06"},"publish_date":"2006-02-06","publish_status":"0","recid":"13","relation_version_is_last":true,"title":["Structural and morphological control of nanosized Cu islands on SiO2 using a Ti underlayer"],"weko_creator_id":"1","weko_shared_id":2},"updated":"2022-12-19T03:40:55.404330+00:00"}