{"created":"2021-03-01T06:18:21.108314+00:00","id":1765,"links":{},"metadata":{"_buckets":{"deposit":"941ce1e5-05fa-4c91-9578-8442f4a9cd12"},"_deposit":{"id":"1765","owners":[],"pid":{"revision_id":0,"type":"depid","value":"1765"},"status":"published"},"_oai":{"id":"oai:repository.dl.itc.u-tokyo.ac.jp:00001765","sets":["6:260:261","9:233:234"]},"item_7_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Analysis of Single Event Transient Pulses of a Fully-Depleted SOI MOSFET"}]},"item_7_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-02-03","bibliographicIssueDateType":"Issued"},"bibliographic_titles":[{}]}]},"item_7_date_granted_25":{"attribute_name":"学位授与年月日","attribute_value_mlt":[{"subitem_dategranted":"2006-03"}]},"item_7_degree_name_20":{"attribute_name":"学位名","attribute_value_mlt":[{"subitem_degreename":"修士(工学)"}]},"item_7_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"近年，宇宙放射線や中性子線が引き起こすソフトエラーの一種である，シングル・イベント・トランジェント(Single Event Transient、以下SET) が問題視されている．SET とは，高エネルギー荷電粒子がデバイスに入射することで生じる電流（電圧）パルスである．論理回路中を伝播して誤動作を引き起こすため，その対策が急務となっている．一方，SOI デバイスは，埋め込み酸化膜が存在し、イオン化放射の影響を受ける体積が少ないため、ソフトエラー対策に有効なデバイスとして知られている。しかし、そのSET 特性は未だ明らかにされていない部分が多い．そこで，我々が開発している耐放射線完全空乏型SOI MOSFETにおけるSET パルスの解析をシミュレーションにより行った．","subitem_description_type":"Abstract"}]},"item_7_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"5535","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Aimi, Masahiro"}]}]},"item_7_select_21":{"attribute_name":"学位","attribute_value_mlt":[{"subitem_select_item":"master"}]},"item_7_text_24":{"attribute_name":"研究科・専攻","attribute_value_mlt":[{"subitem_text_value":"工学系研究科電子工学専攻"}]},"item_7_text_4":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"東京大学大学院工学系研究科 電子工学専攻"},{"subitem_text_value":"Department of Electronic Engineering, The University of Tokyo"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"会見, 真宏"}],"nameIdentifiers":[{"nameIdentifier":"5534","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-05-31"}],"displaytype":"detail","filename":"37046379.pdf","filesize":[{"value":"634.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"37046379.pdf","url":"https://repository.dl.itc.u-tokyo.ac.jp/record/1765/files/37046379.pdf"},"version_id":"f6e1ab3d-0712-44e6-ad73-449047fdc781"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"SOI","subitem_subject_scheme":"Other"},{"subitem_subject":"Single Event Transient","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"thesis","resourceuri":"http://purl.org/coar/resource_type/c_46ec"}]},"item_title":"完全空乏型SOI MOSFETにおけるシングル・イベント・トランジェントパルスの解析","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"完全空乏型SOI MOSFETにおけるシングル・イベント・トランジェントパルスの解析"}]},"item_type_id":"7","owner":"1","path":["234","261"],"pubdate":{"attribute_name":"公開日","attribute_value":"2011-08-08"},"publish_date":"2011-08-08","publish_status":"0","recid":"1765","relation_version_is_last":true,"title":["完全空乏型SOI MOSFETにおけるシングル・イベント・トランジェントパルスの解析"],"weko_creator_id":"1","weko_shared_id":null},"updated":"2022-12-19T03:43:11.953406+00:00"}