{"created":"2021-03-01T06:35:40.711174+00:00","id":18294,"links":{},"metadata":{"_buckets":{"deposit":"609fb9f4-ef96-4146-b6d1-2a60cfa6ae3a"},"_deposit":{"id":"18294","owners":[],"pid":{"revision_id":0,"type":"depid","value":"18294"},"status":"published"},"_oai":{"id":"oai:repository.dl.itc.u-tokyo.ac.jp:00018294","sets":["171:1108:1192:1212","9:504:1111:1194:1213"]},"item_4_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Fabrication of the Si Ultra-sm all MOSFET by Using Anisotropic Etching and Room Temperature Observation of the Coulomb Blockade Oscillations"}]},"item_4_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1997-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageEnd":"177","bibliographicPageStart":"174","bibliographicVolumeNumber":"49","bibliographic_titles":[{"bibliographic_title":"生産研究"}]}]},"item_4_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"結晶面方位に依存した異方性エッチングを用いて, 線幅制御された均―なSi量子細線をSIMOX基板上に作製するプロセスを開発し, 本方法を用いて作製したSi細線MOSFETで室温において単一電子現象であるクーロンブロッケード振動を観測することに成功した. この方法では, 量子細線の線幅はリソグラフィに依存せず, SIMOX基板のSi膜厚のみで決定されるので極めて制御性が良い. 最小線幅は10nm以下と見積もられる. Si細線MOSFETのクーロンブロッケード振動は, 77Kではより顕著になり, さらに低温では複数の鋭いピークに分裂した. 実験結果をもとにチャネル中の構造を検討し, 複数の量子ドットが弱くカップリングしていることを明らかにした.","subitem_description_type":"Abstract"}]},"item_4_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"31066","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Ishikuro, Hiroki"}]},{"nameIdentifiers":[{"nameIdentifier":"31067","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Fujii, Tomoyuki"}]},{"nameIdentifiers":[{"nameIdentifier":"31068","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Hashiguchi, Gen"}]},{"nameIdentifiers":[{"nameIdentifier":"31069","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Ikoma, Toshiaki"}]},{"nameIdentifiers":[{"nameIdentifier":"31070","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Hiramoto, Toshiro"}]}]},"item_4_publisher_20":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"東京大学生産技術研究所"}]},"item_4_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00127075","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0037105X","subitem_source_identifier_type":"ISSN"}]},"item_4_subject_15":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"549","subitem_subject_scheme":"NDC"}]},"item_4_text_21":{"attribute_name":"出版者別名","attribute_value_mlt":[{"subitem_text_value":"Institute of Industrial Science, the University of Tokyo"}]},"item_4_text_4":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"東京大学生産技術研究所第3部 電子工学"},{"subitem_text_value":"新日本製鐵(株)エレクトロニクス研究所 半導体電子工学"},{"subitem_text_value":"(株)テキサスインスツルメンツ筑波研究開発センター 電子工学"},{"subitem_text_value":"東京大学大規模集積システム設計教育研究センター 電子工学"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"石黒, 仁揮"}],"nameIdentifiers":[{"nameIdentifier":"31061","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"藤井, 呂如"}],"nameIdentifiers":[{"nameIdentifier":"31062","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"橋口, 原"}],"nameIdentifiers":[{"nameIdentifier":"31063","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"生駒, 俊明"}],"nameIdentifiers":[{"nameIdentifier":"31064","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"平本, 俊郎"}],"nameIdentifiers":[{"nameIdentifier":"31065","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-06-08"}],"displaytype":"detail","filename":"sk049003009.pdf","filesize":[{"value":"684.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"sk049003009.pdf","url":"https://repository.dl.itc.u-tokyo.ac.jp/record/18294/files/sk049003009.pdf"},"version_id":"2384e04c-37c3-4f5f-95ac-80cf2fdb69ee"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"研究解説 : 異方性エッチングによるSi極微細MOSFETの作製と室温におけるクーロンブロケード振動の観測","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"研究解説 : 異方性エッチングによるSi極微細MOSFETの作製と室温におけるクーロンブロケード振動の観測"}]},"item_type_id":"4","owner":"1","path":["1212","1213"],"pubdate":{"attribute_name":"公開日","attribute_value":"2013-01-28"},"publish_date":"2013-01-28","publish_status":"0","recid":"18294","relation_version_is_last":true,"title":["研究解説 : 異方性エッチングによるSi極微細MOSFETの作製と室温におけるクーロンブロケード振動の観測"],"weko_creator_id":"1","weko_shared_id":null},"updated":"2022-12-19T03:57:12.607449+00:00"}