{"created":"2021-03-01T06:35:44.603020+00:00","id":18354,"links":{},"metadata":{"_buckets":{"deposit":"43346531-817a-4697-bd10-a39fec3eaef3"},"_deposit":{"id":"18354","owners":[],"pid":{"revision_id":0,"type":"depid","value":"18354"},"status":"published"},"_oai":{"id":"oai:repository.dl.itc.u-tokyo.ac.jp:00018354","sets":["171:1108:1218:1224","9:504:1111:1220:1225"]},"item_4_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Device and Process Design and Characterization of 0.1μm Thin Film SOI MOSFETs"}]},"item_4_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1996-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"10","bibliographicPageEnd":"506","bibliographicPageStart":"502","bibliographicVolumeNumber":"48","bibliographic_titles":[{"bibliographic_title":"生産研究"}]}]},"item_4_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"0.1μm薄膜SOI MOSFETの設計・試作を行った. チャネルイオン注入(BF2)のエネルギーをSOIと埋め込み酸化膜の界面にピークがくるよう設計することによりパンチスルーストッパの形成とチャネルのドープを1回のイオン注入で実現した. この簡便なプロセスにより均一ドープの場合と比較し短チャネル効果が抑制できることをシミュレーションにより示し, ゲート長0.095μmのSOI MOSFETの動作を確認した.","subitem_description_type":"Abstract"}]},"item_4_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"31311","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Takamiya, Makoto"}]},{"nameIdentifiers":[{"nameIdentifier":"31312","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Saraya, Takuya"}]},{"nameIdentifiers":[{"nameIdentifier":"31313","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Ngoc, Duyet Tran"}]},{"nameIdentifiers":[{"nameIdentifier":"31314","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Tanaka, Tsuyoshi"}]},{"nameIdentifiers":[{"nameIdentifier":"31315","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Ishikuro, Hiroki"}]},{"nameIdentifiers":[{"nameIdentifier":"31316","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Hiramoto, Toshiro"}]},{"nameIdentifiers":[{"nameIdentifier":"31317","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Ikoma, 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MOSFETのデバイス・プロセス設計と特性評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"研究解説 : 0.1μm薄膜SOI MOSFETのデバイス・プロセス設計と特性評価"}]},"item_type_id":"4","owner":"1","path":["1224","1225"],"pubdate":{"attribute_name":"公開日","attribute_value":"2013-01-21"},"publish_date":"2013-01-21","publish_status":"0","recid":"18354","relation_version_is_last":true,"title":["研究解説 : 0.1μm薄膜SOI MOSFETのデバイス・プロセス設計と特性評価"],"weko_creator_id":"1","weko_shared_id":null},"updated":"2022-12-19T05:07:24.836724+00:00"}