{"created":"2021-03-01T06:35:54.737031+00:00","id":18510,"links":{},"metadata":{"_buckets":{"deposit":"dfee07e5-c7f7-4ac3-a728-1fb3b70454ce"},"_deposit":{"id":"18510","owners":[],"pid":{"revision_id":0,"type":"depid","value":"18510"},"status":"published"},"_oai":{"id":"oai:repository.dl.itc.u-tokyo.ac.jp:00018510","sets":["171:1108:1244:1252","9:504:1111:1246:1253"]},"item_4_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Conductance Oscillations in a Very Small Channel SOI-MOSFET with a Split-gate"}]},"item_4_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1995-09","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"9","bibliographicPageEnd":"431","bibliographicPageStart":"428","bibliographicVolumeNumber":"47","bibliographic_titles":[{"bibliographic_title":"生産研究"}]}]},"item_4_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Si極微細構造における電気伝導を解明するため, Si極微細MOS構造を作製しその電気特性の測定を行っている. SOI(Silicon On Insulator)基板上に電子ビーム露光およびリフトオフによりスプリットゲートを作製し, 静電的に電子の伝導チャネルを細線領域に閉じ込めることで極微細MOS構造を実現した. 4.2K以下の測定でピンチオフ電圧付近のコングクタンスに振動が観測された. フーリエスペクトルからコンダクタンス振動は, 周期的成分および非周期的成分から形成されていることが分かった. また, ドレイン--ソース間の電流--電圧特性には非線形性が観測された. これらの現象は電気伝導がクーロンブロケードによる単一電子トンネル, およびホッピング伝導に支配されていることを示すものだと考えられる.","subitem_description_type":"Abstract"}]},"item_4_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"32056","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Ishikuro, Hiroki"}]},{"nameIdentifiers":[{"nameIdentifier":"32057","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Hiramoto, Toshiro"}]},{"nameIdentifiers":[{"nameIdentifier":"32058","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Ikoma, Toshiaki"}]}]},"item_4_publisher_20":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"東京大学生産技術研究所"}]},"item_4_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00127075","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0037105X","subitem_source_identifier_type":"ISSN"}]},"item_4_subject_15":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"549","subitem_subject_scheme":"NDC"}]},"item_4_text_21":{"attribute_name":"出版者別名","attribute_value_mlt":[{"subitem_text_value":"Institute of Industrial Science, the University of Tokyo"}]},"item_4_text_4":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"東京大学生産技術研究所第3部 電子工学"},{"subitem_text_value":"東京大学生産技術研究所第3部 集積デバイスエンジニアリング"},{"subitem_text_value":"T.I. 筑波研究開発センター 概念デバイス工学"},{"subitem_text_value":"テキサスインスツルメンツ筑波研究開発センター"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"石黒, 仁揮"}],"nameIdentifiers":[{"nameIdentifier":"32053","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"平本, 俊郎"}],"nameIdentifiers":[{"nameIdentifier":"32054","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"生駒, 俊明"}],"nameIdentifiers":[{"nameIdentifier":"32055","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-06-08"}],"displaytype":"detail","filename":"sk047009007.pdf","filesize":[{"value":"3.2 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"sk047009007.pdf","url":"https://repository.dl.itc.u-tokyo.ac.jp/record/18510/files/sk047009007.pdf"},"version_id":"e4322f10-95cc-4383-95a5-bc0824deb386"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"研究速報 : スプリットゲートによる極微細SOI-MOSにおけるコンダクタンス振動現象","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"研究速報 : スプリットゲートによる極微細SOI-MOSにおけるコンダクタンス振動現象"}]},"item_type_id":"4","owner":"1","path":["1252","1253"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-19"},"publish_date":"2012-11-19","publish_status":"0","recid":"18510","relation_version_is_last":true,"title":["研究速報 : スプリットゲートによる極微細SOI-MOSにおけるコンダクタンス振動現象"],"weko_creator_id":"1","weko_shared_id":null},"updated":"2022-12-19T05:07:16.613483+00:00"}