{"created":"2021-03-01T06:36:07.174088+00:00","id":18705,"links":{},"metadata":{"_buckets":{"deposit":"0050242b-2f88-4fb3-8597-ddfabdc0dea6"},"_deposit":{"id":"18705","owners":[],"pid":{"revision_id":0,"type":"depid","value":"18705"},"status":"published"},"_oai":{"id":"oai:repository.dl.itc.u-tokyo.ac.jp:00018705","sets":["171:1108:1270:1290","9:504:1111:1272:1291"]},"item_4_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"XPS法によるGaAs/AlAsヘテロ界面における遷移領域の評価"}]},"item_4_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1994-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageEnd":"164","bibliographicPageStart":"160","bibliographicVolumeNumber":"46","bibliographic_titles":[{"bibliographic_title":"生産研究"}]}]},"item_4_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We systematically studied the Ga3d and Al2p cation core level binding energies in molecular beam epitaxially grown GaAs/AlAs heterostructures by in-situ x-ray photoemission spectroscopy. The valence band offset ΔEv at GaAs/AlAs interface is found to be 0.44±0.55 eV. Furthermore, we found that the cation core level binding energies in the extreme vicinity of the interface are shifted by ～0.1 eV from their respective bulk values, which clearly indicates that the charge distribution and the resulting band offsets have a transient over a distance of at least ±2 monolayers from the heterointerface.","subitem_description_type":"Abstract"}]},"item_4_description_6":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"小特集 機能エレクトロニクス研究センター","subitem_description_type":"Other"}]},"item_4_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"32954","nameIdentifierScheme":"WEKO"}],"names":[{"name":"平川, 一彦"}]},{"nameIdentifiers":[{"nameIdentifier":"32955","nameIdentifierScheme":"WEKO"}],"names":[{"name":"橋本, 佳男"}]},{"nameIdentifiers":[{"nameIdentifier":"32956","nameIdentifierScheme":"WEKO"}],"names":[{"name":"生駒, 俊明"}]}]},"item_4_publisher_20":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"東京大学生産技術研究所"}]},"item_4_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00127075","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0037105X","subitem_source_identifier_type":"ISSN"}]},"item_4_subject_15":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"428","subitem_subject_scheme":"NDC"}]},"item_4_text_21":{"attribute_name":"出版者別名","attribute_value_mlt":[{"subitem_text_value":"Institute of Industrial Science, the University of Tokyo"}]},"item_4_text_4":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Center for Function Oriented Electronics, Institute of Industrial Science, University of Tokyo 電子工学"},{"subitem_text_value":"Deaprtment of Electrical and Electronic Engineering, Shinsyu University 電子工学"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"HIRAKAWA, Kazuhiko"}],"nameIdentifiers":[{"nameIdentifier":"32951","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"HASHIMOTO, Yoshio"}],"nameIdentifiers":[{"nameIdentifier":"32952","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"IKOMA, Toshiaki"}],"nameIdentifiers":[{"nameIdentifier":"32953","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-06-08"}],"displaytype":"detail","filename":"sk046003003.pdf","filesize":[{"value":"541.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"sk046003003.pdf","url":"https://repository.dl.itc.u-tokyo.ac.jp/record/18705/files/sk046003003.pdf"},"version_id":"5146b4a6-c03c-4e83-8bfe-f3e65ad15cb2"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"特集2 : 研究解説 : Transient of Electrostatic Potential at GaAs/AlAs Heterointerfaces Characterized by X-Ray Photoemission Spectroscopy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"特集2 : 研究解説 : Transient of Electrostatic Potential at GaAs/AlAs Heterointerfaces Characterized by X-Ray Photoemission Spectroscopy"}]},"item_type_id":"4","owner":"1","path":["1290","1291"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-16"},"publish_date":"2012-11-16","publish_status":"0","recid":"18705","relation_version_is_last":true,"title":["特集2 : 研究解説 : Transient of Electrostatic Potential at GaAs/AlAs Heterointerfaces Characterized by X-Ray Photoemission Spectroscopy"],"weko_creator_id":"1","weko_shared_id":null},"updated":"2022-12-19T03:56:33.675813+00:00"}