{"created":"2021-03-01T06:39:44.787030+00:00","id":22066,"links":{},"metadata":{"_buckets":{"deposit":"53a00683-8e7a-4d05-8925-a054dc896e6f"},"_deposit":{"id":"22066","owners":[],"pid":{"revision_id":0,"type":"depid","value":"22066"},"status":"published"},"_oai":{"id":"oai:repository.dl.itc.u-tokyo.ac.jp:00022066","sets":["171:1108:1892:1904","9:504:1111:1894:1905"]},"item_4_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"On Low Frequency Noise in MOS Field Effect Transistors"}]},"item_4_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1969-07-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageEnd":"440","bibliographicPageStart":"434","bibliographicVolumeNumber":"21","bibliographic_titles":[{"bibliographic_title":"生産研究"}]}]},"item_4_description_13":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_4_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"MOS形電界効果トランジスタはSi-SiO2界面を利用したデバイスであるために,界面付近の表面単位の影響をうけて,低周波において1/f雑音とよばれるかなり大きな雑音を発生する.しかし,その発生機構はまだよく解明されていない.ここではその解明のために行なった実験結果(雑音のバイアス依存性や製作条件依存性など)とMcWhorterの雑音理論をMOSトランジスタに拡張した理論とを表面準位に焦点を合わせながら紹介する.","subitem_description_type":"Abstract"}]},"item_4_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"112788","nameIdentifierScheme":"WEKO"}],"names":[{"name":"ADACHI, Yoshio"}]},{"nameIdentifiers":[{"nameIdentifier":"112789","nameIdentifierScheme":"WEKO"}],"names":[{"name":"IKOMA, Toshiaki"}]},{"nameIdentifiers":[{"nameIdentifier":"112790","nameIdentifierScheme":"WEKO"}],"names":[{"name":"CHINONE, Naoki"}]},{"nameIdentifiers":[{"nameIdentifier":"112791","nameIdentifierScheme":"WEKO"}],"names":[{"name":"UEMURA, Yukimori"}]}]},"item_4_publisher_20":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"東京大学生産技術研究所"}]},"item_4_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00127075","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0037105X","subitem_source_identifier_type":"ISSN"}]},"item_4_subject_15":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"500","subitem_subject_scheme":"NDC"}]},"item_4_text_21":{"attribute_name":"出版者別名","attribute_value_mlt":[{"subitem_text_value":"Institute of Industrial Science. University of Tokyo"}]},"item_4_text_4":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"東京大学生産技術研究所 第3部 情報処理工学(半導体電子工学)"},{"subitem_text_value":"日立製作所"},{"subitem_text_value":"東京大学生産技術研究所"},{"subitem_text_value":"東京大学生産技術研究所 通信機器学"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"安達, 芳夫"}],"nameIdentifiers":[{"nameIdentifier":"112784","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"生駒, 俊明"}],"nameIdentifiers":[{"nameIdentifier":"112785","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"茅根, 直樹"}],"nameIdentifiers":[{"nameIdentifier":"112786","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"上村, 幸守"}],"nameIdentifiers":[{"nameIdentifier":"112787","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-06-26"}],"displaytype":"detail","filename":"sk021007002.pdf","filesize":[{"value":"725.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"sk021007002.pdf","url":"https://repository.dl.itc.u-tokyo.ac.jp/record/22066/files/sk021007002.pdf"},"version_id":"c0d6e174-88bd-4c0b-aaf1-1e16da2b6a3f"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"MOS形電界効果トランジスタの低周波雑音について","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"MOS形電界効果トランジスタの低周波雑音について"}]},"item_type_id":"4","owner":"1","path":["1904","1905"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-12-25"},"publish_date":"2009-12-25","publish_status":"0","recid":"22066","relation_version_is_last":true,"title":["MOS形電界効果トランジスタの低周波雑音について"],"weko_creator_id":"1","weko_shared_id":null},"updated":"2022-12-19T03:59:55.371869+00:00"}