{"created":"2021-03-01T06:40:31.287284+00:00","id":22783,"links":{},"metadata":{"_buckets":{"deposit":"e480c797-89eb-4cac-808e-f857d57bf0fc"},"_deposit":{"id":"22783","owners":[],"pid":{"revision_id":0,"type":"depid","value":"22783"},"status":"published"},"_oai":{"id":"oai:repository.dl.itc.u-tokyo.ac.jp:00022783","sets":["171:1108:2022:2040","9:504:1111:2024:2041"]},"item_4_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1964-04-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"107","bibliographicPageStart":"102","bibliographicVolumeNumber":"16","bibliographic_titles":[{"bibliographic_title":"生産研究"}]}]},"item_4_description_13":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_4_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"各種のゲルマニウムメサ型トランジスタの高周波h定数を,周波数とバイアス条件を変えて測定したが,本文では,その結果を整理し,おもにバイアス変化特性につき考察した.すなわち高周波トランジスタの周波数特性曲線は,周波数が高くなると寄生素子(マウントのリード・インダクタンスや漂遊容量)の影響をうけて大幅に変形するが,バイアス特性曲線に及ぼすこの寄生素子の影響は一様であるため,バイアス特性を考察することは,トランジスタの高周波特性を解析するときにもきわめて重要である.本文では,T型等価回路を基礎にして,エミッタ電流およびコレクタ電圧を変化したときの,各h定数の変化曲線を算出し,実験結果と比較してある.また,バイアス変化を利用して知り得た寄生素子の影響についても簡単に述べてある.","subitem_description_type":"Abstract"}]},"item_4_publisher_20":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"東京大学生産技術研究所"}]},"item_4_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00127075","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0037105X","subitem_source_identifier_type":"ISSN"}]},"item_4_subject_15":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"500","subitem_subject_scheme":"NDC"}]},"item_4_text_21":{"attribute_name":"出版者別名","attribute_value_mlt":[{"subitem_text_value":"Institute of Industrial Science. University of Tokyo"}]},"item_4_text_4":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"東京大学生産技術研究所 半導体電子工学 |Institute of Industrial Science. University of Tokyo"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"真鍋, 幸夫"}],"nameIdentifiers":[{"nameIdentifier":"114681","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-06-26"}],"displaytype":"detail","filename":"sk016004002.pdf","filesize":[{"value":"467.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"sk016004002.pdf","url":"https://repository.dl.itc.u-tokyo.ac.jp/record/22783/files/sk016004002.pdf"},"version_id":"f4fc55b6-d916-44ec-b0e4-574d4637d54a"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"研究解説 : トランジスタの高周波特性のバイアスによる変化 : ゲルマニウムメサ型トランジスタについて","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"研究解説 : トランジスタの高周波特性のバイアスによる変化 : ゲルマニウムメサ型トランジスタについて"}]},"item_type_id":"4","owner":"1","path":["2040","2041"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-12-24"},"publish_date":"2009-12-24","publish_status":"0","recid":"22783","relation_version_is_last":true,"title":["研究解説 : トランジスタの高周波特性のバイアスによる変化 : ゲルマニウムメサ型トランジスタについて"],"weko_creator_id":"1","weko_shared_id":null},"updated":"2022-12-19T04:00:51.530953+00:00"}