{"created":"2021-03-01T06:16:33.777319+00:00","id":28,"links":{},"metadata":{"_buckets":{"deposit":"4b35fe2e-e9b2-471b-824e-a884f879eef6"},"_deposit":{"id":"28","owners":[],"pid":{"revision_id":0,"type":"depid","value":"28"},"status":"published"},"_oai":{"id":"oai:repository.dl.itc.u-tokyo.ac.jp:00000028"},"item_2_biblio_info_7":{"attribute_name":"\u66f8\u8a8c\u60c5\u5831","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1995-06","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"2302","bibliographicPageStart":"2299","bibliographicVolumeNumber":"5","bibliographic_titles":[{"bibliographic_title":"IEEE transactions on applied superconductivity : a publication of the IEEE Superconductivity Committee"}]}]},"item_2_description_13":{"attribute_name":"\u30d5\u30a9\u30fc\u30de\u30c3\u30c8","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_2_description_5":{"attribute_name":"\u6284\u9332","attribute_value_mlt":[{"subitem_description":"We have fabricated Nb/AlOX/Nb Josephson tunnel junctions using a sputtering apparatus with a load-lock system. The junctions that had 50 mu m x 50 mu m area showed a V-m value (the product of the critical current and the subgap resistance at 2 mV) as high as 50 mV at a current density of 160 A/cm(2). Moreover, junctions having different thicknesses of the Al over-layer were concurrently fabricated on one wafer to study the dependence of the current-voltage characteristics on this Al over-layer. The I-V characteristics were also calculated by McMillan's tunneling model and were compared with the measured I-V characteristics.","subitem_description_type":"Abstract"}]},"item_2_full_name_3":{"attribute_name":"\u8457\u8005\u5225\u540d","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"117","nameIdentifierScheme":"WEKO"}],"names":[{"name":"\u5ca1\u90e8, \u6d0b\u4e00"}]},{"nameIdentifiers":[{"nameIdentifier":"118","nameIdentifierScheme":"WEKO"}],"names":[{"name":"\u4e2d\u5c71, \u660e\u82b3"}]}]},"item_2_publisher_20":{"attribute_name":"\u51fa\u7248\u8005","attribute_value_mlt":[{"subitem_publisher":"IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC"}]},"item_2_rights_12":{"attribute_name":"\u6a29\u5229","attribute_value_mlt":[{"subitem_rights":"\u00a91995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE."}]},"item_2_source_id_10":{"attribute_name":"\u66f8\u8a8c\u30ec\u30b3\u30fc\u30c9ID","attribute_value_mlt":[{"subitem_source_identifier":"AA10791666","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"10518223","subitem_source_identifier_type":"ISSN"}]},"item_2_subject_15":{"attribute_name":"\u65e5\u672c\u5341\u9032\u5206\u985e\u6cd5","attribute_value_mlt":[{"subitem_subject":"549.2","subitem_subject_scheme":"NDC"}]},"item_creator":{"attribute_name":"\u8457\u8005","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nakayama, Akiyoshi"}],"nameIdentifiers":[{"nameIdentifier":"113","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nagashima, Haruo"}],"nameIdentifiers":[{"nameIdentifier":"114","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shimada, Junichi"}],"nameIdentifiers":[{"nameIdentifier":"115","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Okabe, Yoichi"}],"nameIdentifiers":[{"nameIdentifier":"116","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"\u30d5\u30a1\u30a4\u30eb\u60c5\u5831","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-05-30"}],"displaytype":"detail","filename":"IEEE_A_S_1995_5_2_3_2299.pdf","filesize":[{"value":"326.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"IEEE_A_S_1995_5_2_3_2299.pdf","url":"https://repository.dl.itc.u-tokyo.ac.jp/record/28/files/IEEE_A_S_1995_5_2_3_2299.pdf"},"version_id":"75206a87-2e40-4d80-826c-a63b7a136b22"}]},"item_keyword":{"attribute_name":"\u30ad\u30fc\u30ef\u30fc\u30c9","attribute_value_mlt":[{"subitem_subject":"JOSEPHSON","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"\u8a00\u8a9e","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"\u8cc7\u6e90\u30bf\u30a4\u30d7","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"EFFECTS OF ALUMINUM OVER-LAYER THICKNESS ON CHARACTERISTICS OF NIOBIUM TUNNEL-JUNCTIONS FABRICATED BY DC MAGNETRON SPUTTERING","item_titles":{"attribute_name":"\u30bf\u30a4\u30c8\u30eb","attribute_value_mlt":[{"subitem_title":"EFFECTS OF ALUMINUM OVER-LAYER THICKNESS ON CHARACTERISTICS OF NIOBIUM TUNNEL-JUNCTIONS FABRICATED BY DC MAGNETRON SPUTTERING"}]},"item_type_id":"2","owner":"1","path":["12/13","9/10/14"],"pubdate":{"attribute_name":"\u516c\u958b\u65e5","attribute_value":"2006-02-13"},"publish_date":"2006-02-13","publish_status":"0","recid":"28","relation_version_is_last":true,"title":["EFFECTS OF ALUMINUM OVER-LAYER THICKNESS ON CHARACTERISTICS OF NIOBIUM TUNNEL-JUNCTIONS FABRICATED BY DC MAGNETRON SPUTTERING"],"weko_creator_id":"1","weko_shared_id":null},"updated":"2021-03-02T08:54:36.571052+00:00"}