{"created":"2021-03-01T06:20:16.072809+00:00","id":3622,"links":{},"metadata":{"_buckets":{"deposit":"242f4637-1e55-4ece-b7fc-2f20cf3bd935"},"_deposit":{"id":"3622","owners":[],"pid":{"revision_id":0,"type":"depid","value":"3622"},"status":"published"},"_oai":{"id":"oai:repository.dl.itc.u-tokyo.ac.jp:00003622","sets":["110:212:254","9:233:234"]},"item_7_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-03-24","bibliographicIssueDateType":"Issued"},"bibliographic_titles":[{}]}]},"item_7_date_granted_25":{"attribute_name":"学位授与年月日","attribute_value_mlt":[{"subitem_dategranted":"2010-03-24"}]},"item_7_degree_name_20":{"attribute_name":"学位名","attribute_value_mlt":[{"subitem_degreename":"修士(科学)"}]},"item_7_select_21":{"attribute_name":"学位","attribute_value_mlt":[{"subitem_select_item":"master"}]},"item_7_text_24":{"attribute_name":"研究科・専攻","attribute_value_mlt":[{"subitem_text_value":"新領域創成科学研究科物質系専攻"}]},"item_7_text_27":{"attribute_name":"学位記番号","attribute_value_mlt":[{"subitem_text_value":"修創域第3213号"}]},"item_7_text_4":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"東京大学大学院新領域創成科学研究科基盤科学研究系物質系専攻"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"中村, 桂土"}],"nameIdentifiers":[{"nameIdentifier":"8600","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-05-31"}],"displaytype":"detail","filename":"K-02067.pdf","filesize":[{"value":"11.8 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文(fulltext)","url":"https://repository.dl.itc.u-tokyo.ac.jp/record/3622/files/K-02067.pdf"},"version_id":"4d1e7425-9990-41b0-b59b-d9d5f2e81e79"},{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-05-31"}],"displaytype":"detail","filename":"K-02067-a.pdf","filesize":[{"value":"2.8 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"要旨(summary)","url":"https://repository.dl.itc.u-tokyo.ac.jp/record/3622/files/K-02067-a.pdf"},"version_id":"e21cb97e-6bfe-433b-a007-37a42ab3c97b"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"立方晶窒化物半導体","subitem_subject_scheme":"Other"},{"subitem_subject":"RF-MBE成長","subitem_subject_scheme":"Other"},{"subitem_subject":"YSZ基板","subitem_subject_scheme":"Other"},{"subitem_subject":"InN","subitem_subject_scheme":"Other"},{"subitem_subject":"InGaN","subitem_subject_scheme":"Other"},{"subitem_subject":"立方晶相純度","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"thesis","resourceuri":"http://purl.org/coar/resource_type/c_46ec"}]},"item_title":"RF-MBE法によるYSZ（001）基板上立法晶InN及びInGaNの作製と評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"RF-MBE法によるYSZ（001）基板上立法晶InN及びInGaNの作製と評価"}]},"item_type_id":"7","owner":"1","path":["234","254"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-10-12"},"publish_date":"2012-10-12","publish_status":"0","recid":"3622","relation_version_is_last":true,"title":["RF-MBE法によるYSZ（001）基板上立法晶InN及びInGaNの作製と評価"],"weko_creator_id":"1","weko_shared_id":null},"updated":"2022-12-19T03:45:17.525472+00:00"}