{"created":"2021-03-01T06:17:12.115253+00:00","id":658,"links":{},"metadata":{"_buckets":{"deposit":"50e903fd-6b69-4a5e-a45b-ac1a79b55d3e"},"_deposit":{"id":"658","owners":[],"pid":{"revision_id":0,"type":"depid","value":"658"},"status":"published"},"_oai":{"id":"oai:repository.dl.itc.u-tokyo.ac.jp:00000658"},"item_2_biblio_info_7":{"attribute_name":"\u66f8\u8a8c\u60c5\u5831","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1987-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"1492","bibliographicPageStart":"1489","bibliographicVolumeNumber":"23","bibliographic_titles":[{"bibliographic_title":"IEEE transactions on magnetics"}]}]},"item_2_description_5":{"attribute_name":"\u6284\u9332","attribute_value_mlt":[{"subitem_description":"All-NbN nanobridges with gap structure in I-V curves have been reproducibly constructed using RIE and lift-off techniques. The nanobridges had a width of 2 Dm, and a thickness of<30 nm. The length of nanobridge was about of the order of 3 to 5 coherence length of epitaxial NbN films. The nanobridges had nearly ideal characteristics: sharply defined critical current, high resistance, well-defined gap structure at about 4 mV, large IcRn products of -3 mV, and low excess current. Small-area dc SQUIDs were made using the nanobridges, and anaIys&s of the response to magnetic flux were perforaed. The current-phase relationship of the nanobridges was found t o be close to sinusoidal. The maximum LC resonant voltage was about 1.2 mu, corresponding to a frequency of 580 GHz. The I F peak was obtained up to the bias voltage of about 4 mV in 101 GHz Josephson mixing.","subitem_description_type":"Abstract"}]},"item_2_full_name_3":{"attribute_name":"\u8457\u8005\u5225\u540d","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"2182","nameIdentifierScheme":"WEKO"}],"names":[{"name":"\u5ca1\u90e8, \u6d0b\u4e00"}]}]},"item_2_publisher_20":{"attribute_name":"\u51fa\u7248\u8005","attribute_value_mlt":[{"subitem_publisher":"IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC"}]},"item_2_rights_12":{"attribute_name":"\u6a29\u5229","attribute_value_mlt":[{"subitem_rights":"\u00a91987 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE."}]},"item_2_source_id_10":{"attribute_name":"\u66f8\u8a8c\u30ec\u30b3\u30fc\u30c9ID","attribute_value_mlt":[{"subitem_source_identifier":"AA00667933","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00189464","subitem_source_identifier_type":"ISSN"}]},"item_2_subject_15":{"attribute_name":"\u65e5\u672c\u5341\u9032\u5206\u985e\u6cd5","attribute_value_mlt":[{"subitem_subject":"549.2","subitem_subject_scheme":"NDC"}]},"item_creator":{"attribute_name":"\u8457\u8005","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hamasaki, K"}],"nameIdentifiers":[{"nameIdentifier":"2177","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yakihara, I"}],"nameIdentifiers":[{"nameIdentifier":"2178","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Wang, Z"}],"nameIdentifiers":[{"nameIdentifier":"2179","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamashita, T"}],"nameIdentifiers":[{"nameIdentifier":"2180","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Okabe, Yoichi"}],"nameIdentifiers":[{"nameIdentifier":"2181","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"\u30d5\u30a1\u30a4\u30eb\u60c5\u5831","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-05-30"}],"displaytype":"detail","filename":"IEEE_M_1987_23_2_1489.pdf","filesize":[{"value":"519.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"IEEE_M_1987_23_2_1489.pdf","url":"https://repository.dl.itc.u-tokyo.ac.jp/record/658/files/IEEE_M_1987_23_2_1489.pdf"},"version_id":"5dc4edfb-491e-410a-a16e-7dded30884de"}]},"item_language":{"attribute_name":"\u8a00\u8a9e","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"\u8cc7\u6e90\u30bf\u30a4\u30d7","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"HIGH-FREQUENCY PROPERTIES OF ALL-NBN NANOBRIDGES WITH GAP STRUCTURE IN IV CURVES","item_titles":{"attribute_name":"\u30bf\u30a4\u30c8\u30eb","attribute_value_mlt":[{"subitem_title":"HIGH-FREQUENCY PROPERTIES OF ALL-NBN NANOBRIDGES WITH GAP STRUCTURE IN IV CURVES"}]},"item_type_id":"2","owner":"1","path":["12/13","9/10/14"],"pubdate":{"attribute_name":"\u516c\u958b\u65e5","attribute_value":"2015-02-04"},"publish_date":"2015-02-04","publish_status":"0","recid":"658","relation_version_is_last":true,"title":["HIGH-FREQUENCY PROPERTIES OF ALL-NBN NANOBRIDGES WITH GAP STRUCTURE IN IV CURVES"],"weko_creator_id":"1","weko_shared_id":null},"updated":"2021-03-02T08:47:00.826787+00:00"}