@article{oai:repository.dl.itc.u-tokyo.ac.jp:00000664,
 author = {Kikuchi, Richard Heihachiro and Kita, Koji},
 journal = {Applied Physics Letters},
 month = {Jul},
 note = {UTokyo Research掲載「次世代パワーデバイスの理想性能に近づく絶縁膜材料作製手法を開発」 URI: http://www.u-tokyo.ac.jp/ja/utokyo-research/research-news/advanced-dielectric-film-growth-technique-for-next-generation-power-devices/, UTokyo Research "Advanced dielectric film growth technique for next generation power devices" URI: http://www.u-tokyo.ac.jp/en/utokyo-research/research-news/advanced-dielectric-film-growth-technique-for-next-generation-power-devices/},
 title = {Fabrication of SiO2/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation},
 volume = {105},
 year = {2014}
}