{"created":"2021-03-01T06:17:12.488000+00:00","id":664,"links":{},"metadata":{"_buckets":{"deposit":"4a7784f4-8a60-47e1-b393-e7f82aa30ccd"},"_deposit":{"id":"664","owners":[],"pid":{"revision_id":0,"type":"depid","value":"664"},"status":"published"},"_oai":{"id":"oai:repository.dl.itc.u-tokyo.ac.jp:00000664"},"item_2_biblio_info_7":{"attribute_name":"\u66f8\u8a8c\u60c5\u5831","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2014-07-25","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"032106","bibliographicVolumeNumber":"105","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters"}]}]},"item_2_description_6":{"attribute_name":"\u5185\u5bb9\u8a18\u8ff0","attribute_value_mlt":[{"subitem_description":"UTokyo Research\u63b2\u8f09\u300c\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u7406\u60f3\u6027\u80fd\u306b\u8fd1\u3065\u304f\u7d76\u7e01\u819c\u6750\u6599\u4f5c\u88fd\u624b\u6cd5\u3092\u958b\u767a\u300d URI: http://www.u-tokyo.ac.jp/ja/utokyo-research/research-news/advanced-dielectric-film-growth-technique-for-next-generation-power-devices/","subitem_description_type":"Other"},{"subitem_description":"UTokyo Research \"Advanced dielectric film growth technique for next generation power devices\" URI: http://www.u-tokyo.ac.jp/en/utokyo-research/research-news/advanced-dielectric-film-growth-technique-for-next-generation-power-devices/","subitem_description_type":"Other"}]},"item_2_publisher_20":{"attribute_name":"\u51fa\u7248\u8005","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing LLC"}]},"item_2_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1063/1.4891166","subitem_relation_type_select":"DOI"}}]},"item_2_relation_25":{"attribute_name":"\u95a2\u4fc2URI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.u-tokyo.ac.jp/ja/utokyo-research/research-news/advanced-dielectric-film-growth-technique-for-next-generation-power-devices/","subitem_relation_type_select":"URI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.u-tokyo.ac.jp/en/utokyo-research/research-news/advanced-dielectric-film-growth-technique-for-next-generation-power-devices/","subitem_relation_type_select":"URI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://scitation.aip.org/content/aip/journal/apl/105/3/10.1063/1.4891166","subitem_relation_type_select":"URI"}}]},"item_2_rights_12":{"attribute_name":"\u6a29\u5229","attribute_value_mlt":[{"subitem_rights":"(c) 2014 AIP Publishing LLC"}]},"item_2_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"1077-3118","subitem_source_identifier_type":"ISSN"}]},"item_2_text_4":{"attribute_name":"\u8457\u8005\u6240\u5c5e","attribute_value_mlt":[{"subitem_text_value":"Department of Materials Engineering, The University of Tokyo"},{"subitem_text_value":"JST-PRESTO, Japan Science and Technology Agency (JST)"}]},"item_creator":{"attribute_name":"\u8457\u8005","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kikuchi, Richard Heihachiro"}],"nameIdentifiers":[{"nameIdentifier":"2338","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kita, Koji"}],"nameIdentifiers":[{"nameIdentifier":"2339","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"\u30d5\u30a1\u30a4\u30eb\u60c5\u5831","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-05-30"}],"displaytype":"detail","filename":"1.4891166.pdf","filesize":[{"value":"469.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"1.4891166.pdf","url":"https://repository.dl.itc.u-tokyo.ac.jp/record/664/files/1.4891166.pdf"},"version_id":"c4b3e626-9d56-4cc6-892a-9eb9078edf5d"}]},"item_language":{"attribute_name":"\u8a00\u8a9e","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"\u8cc7\u6e90\u30bf\u30a4\u30d7","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Fabrication of SiO2/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation","item_titles":{"attribute_name":"\u30bf\u30a4\u30c8\u30eb","attribute_value_mlt":[{"subitem_title":"Fabrication of SiO2/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation"}]},"item_type_id":"2","owner":"1","path":["9/10/11","6/149/150"],"pubdate":{"attribute_name":"\u516c\u958b\u65e5","attribute_value":"2015-02-04"},"publish_date":"2015-02-04","publish_status":"0","recid":"664","relation_version_is_last":true,"title":["Fabrication of SiO2/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation"],"weko_creator_id":"1","weko_shared_id":2},"updated":"2021-03-01T16:43:57.086121+00:00"}