{"created":"2021-03-01T06:16:32.589192+00:00","id":8,"links":{},"metadata":{"_buckets":{"deposit":"49868dcc-5c1a-43aa-8d7a-b11ab5be4bf1"},"_deposit":{"id":"8","owners":[],"pid":{"revision_id":0,"type":"depid","value":"8"},"status":"published"},"_oai":{"id":"oai:repository.dl.itc.u-tokyo.ac.jp:00000008","sets":["6:7:8","9:10:11"]},"item_2_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-06-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageEnd":"9344","bibliographicPageStart":"9336","bibliographicVolumeNumber":"93","bibliographic_titles":[{"bibliographic_title":"Journal of applied physics"}]}]},"item_2_description_13":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_2_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The growth of sputter-deposited Cr thin films on amorphous SiO2 during the early stages was studied using transmission electron microscopy. Amorphous three-dimensional islands were first formed, and then they grew with continuously increasing density and slowly increasing size as the deposition proceeded. When these islands began to coalesce at a nominal film thickness of 2.3–3.0 nm, they abruptly crystallized into randomly oriented crystalline nuclei. The depth profile analysis by x-ray photoelectron spectroscopy indicates the existence of interfacial Cr–O interactions. After excluding the possibilities of kinetic limitation and interfacial mixing, a thermodynamic model was employed to explain the size-dependent amorphous-to-crystalline transition. Our results suggest that the interfacial-interaction-induced strain relaxation at island/substrate interfaces might result in the thermodynamic stabilization of substrate-supported amorphous islands below a critical size.","subitem_description_type":"Abstract"}]},"item_2_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"9","nameIdentifierScheme":"WEKO"}],"names":[{"name":"野田, 優"}]},{"nameIdentifiers":[{"nameIdentifier":"10","nameIdentifierScheme":"WEKO"}],"names":[{"name":"小宮山, 宏"}]}]},"item_2_publisher_20":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_2_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_2_subject_15":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"431.86","subitem_subject_scheme":"NDC"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hu, Minghui"}],"nameIdentifiers":[{"nameIdentifier":"6","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Noda, Suguru"}],"nameIdentifiers":[{"nameIdentifier":"7","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hiroshi, Komiyama"}],"nameIdentifiers":[{"nameIdentifier":"8","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-05-30"}],"displaytype":"detail","filename":"2003JAP_hu.pdf","filesize":[{"value":"1.4 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"2003JAP_hu.pdf","url":"https://repository.dl.itc.u-tokyo.ac.jp/record/8/files/2003JAP_hu.pdf"},"version_id":"01173a2f-55ff-4053-9ca0-c327c91415ed"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Amorphous-to-crystalline transition during the early stages of thin film growth of Cr on SiO2","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Amorphous-to-crystalline transition during the early stages of thin film growth of Cr on SiO2"}]},"item_type_id":"2","owner":"1","path":["11","8"],"pubdate":{"attribute_name":"公開日","attribute_value":"2006-02-06"},"publish_date":"2006-02-06","publish_status":"0","recid":"8","relation_version_is_last":true,"title":["Amorphous-to-crystalline transition during the early stages of thin film growth of Cr on SiO2"],"weko_creator_id":"1","weko_shared_id":null},"updated":"2022-12-19T03:40:56.643402+00:00"}