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Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)
http://hdl.handle.net/2261/19
http://hdl.handle.net/2261/192c925933-63bb-4879-9ca7-92d06e97c295
名前 / ファイル | ライセンス | アクション |
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2002JVSTA_li.pdf (447.7 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-02-06 | |||||
タイトル | ||||||
タイトル | Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111) | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Li, Tu-Qiang
× Li, Tu-Qiang× Noda, Suguru× Tsuji, Yoshiko× Ohsawa, Toshio× Komiyama, Hiroshi |
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著者別名 | ||||||
識別子 | 34 | |||||
識別子Scheme | WEKO | |||||
姓名 | 野田, 優 | |||||
著者別名 | ||||||
識別子 | 35 | |||||
識別子Scheme | WEKO | |||||
姓名 | 辻, 佳子 | |||||
著者別名 | ||||||
識別子 | 36 | |||||
識別子Scheme | WEKO | |||||
姓名 | 大沢, 利男 | |||||
著者別名 | ||||||
識別子 | 37 | |||||
識別子Scheme | WEKO | |||||
姓名 | 小宮山, 宏 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The initial growth and texture formation mechanism of titanium nitride (TiN) films were investigated by depositing TiN films on (111) silicon substrates by using reactive magnetron sputtering of a Ti metallic target under a N2/Ar atmosphere, and then analyzing the films in detail by using transmission electron microscopy (TEM) and x-ray diffraction (XRD). Two power sources for the sputtering, dc and rf, were compared. At the initial growth stage, a continuous amorphous film containing randomly oriented nuclei was observed when the film thickness was about 3 nm. The nuclei grew and formed a polycrystalline layer when the film thickness was about 6 nm. As the film grew further, its orientation changed depending on the deposition conditions. For dc sputtering, the appearance of (111) or (200)-preferred orientations depended on the N2 partial pressure, and the intensity of the preferred orientation increased with increasing film thickness. For rf sputtering, however, when the film thickness was small (for instance, about 20 nm), the film showed (200) orientation, independent of the N2 partial pressure, and further growth caused the film to orient to the (111) orientation when the N2 partial pressure was low (about 0.015 Pa). The results indicated that preferred orientation of TiN films is controlled by a competition between kinetic and thermodynamic effects. | |||||
書誌情報 |
Journal of vacuum science & technology. 2nd series. A, Vacuum, surfaces, and films : an official journal of the American Vacuum Society 巻 20, 号 3, p. 583-588, 発行日 2002-05 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 07342101 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10635514 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
日本十進分類法 | ||||||
主題 | 431.86 | |||||
主題Scheme | NDC | |||||
出版者 | ||||||
出版者 | American Institute of Physics |