ログイン
言語:

WEKO3

  • トップ
  • ランキング
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

  1. 113 工学系研究科・工学部
  2. 38 化学システム工学専攻
  3. 1133810 学術雑誌論文
  1. 0 資料タイプ別
  2. 10 学術雑誌論文
  3. 014 自然科学

Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)

http://hdl.handle.net/2261/19
http://hdl.handle.net/2261/19
2c925933-63bb-4879-9ca7-92d06e97c295
名前 / ファイル ライセンス アクション
2002JVSTA_li.pdf 2002JVSTA_li.pdf (447.7 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-02-06
タイトル
タイトル Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)
言語
言語 eng
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
著者 Li, Tu-Qiang

× Li, Tu-Qiang

WEKO 29

Li, Tu-Qiang

Search repository
Noda, Suguru

× Noda, Suguru

WEKO 30

Noda, Suguru

Search repository
Tsuji, Yoshiko

× Tsuji, Yoshiko

WEKO 31

Tsuji, Yoshiko

Search repository
Ohsawa, Toshio

× Ohsawa, Toshio

WEKO 32

Ohsawa, Toshio

Search repository
Komiyama, Hiroshi

× Komiyama, Hiroshi

WEKO 33

Komiyama, Hiroshi

Search repository
著者別名
識別子Scheme WEKO
識別子 34
姓名 野田, 優
著者別名
識別子Scheme WEKO
識別子 35
姓名 辻, 佳子
著者別名
識別子Scheme WEKO
識別子 36
姓名 大沢, 利男
著者別名
識別子Scheme WEKO
識別子 37
姓名 小宮山, 宏
抄録
内容記述タイプ Abstract
内容記述 The initial growth and texture formation mechanism of titanium nitride (TiN) films were investigated by depositing TiN films on (111) silicon substrates by using reactive magnetron sputtering of a Ti metallic target under a N2/Ar atmosphere, and then analyzing the films in detail by using transmission electron microscopy (TEM) and x-ray diffraction (XRD). Two power sources for the sputtering, dc and rf, were compared. At the initial growth stage, a continuous amorphous film containing randomly oriented nuclei was observed when the film thickness was about 3 nm. The nuclei grew and formed a polycrystalline layer when the film thickness was about 6 nm. As the film grew further, its orientation changed depending on the deposition conditions. For dc sputtering, the appearance of (111) or (200)-preferred orientations depended on the N2 partial pressure, and the intensity of the preferred orientation increased with increasing film thickness. For rf sputtering, however, when the film thickness was small (for instance, about 20 nm), the film showed (200) orientation, independent of the N2 partial pressure, and further growth caused the film to orient to the (111) orientation when the N2 partial pressure was low (about 0.015 Pa). The results indicated that preferred orientation of TiN films is controlled by a competition between kinetic and thermodynamic effects.
書誌情報 Journal of vacuum science & technology. 2nd series. A, Vacuum, surfaces, and films : an official journal of the American Vacuum Society

巻 20, 号 3, p. 583-588, 発行日 2002-05
ISSN
収録物識別子タイプ ISSN
収録物識別子 07342101
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA10635514
フォーマット
内容記述タイプ Other
内容記述 application/pdf
日本十進分類法
主題Scheme NDC
主題 431.86
出版者
出版者 American Institute of Physics
戻る
0
views
See details
Views

Versions

Ver.1 2021-03-02 08:39:19.130433
Show All versions

Share

Mendeley Twitter Facebook Print Addthis

Cite as

エクスポート

OAI-PMH
  • OAI-PMH JPCOAR 2.0
  • OAI-PMH JPCOAR 1.0
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by WEKO3


Powered by WEKO3