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Study on La2O3/InGaAs MOS interfaces and the application to InGaAs MOSFETs
https://doi.org/10.15083/00075277
https://doi.org/10.15083/000752772804259e-2608-440c-bf07-6d7ff776860a
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A33188_summary.pdf (194.2 kB)
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A33188_abstract.pdf (99.0 kB)
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A33188_review.pdf (102.4 kB)
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Item type | 学位論文 / Thesis or Dissertation(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2018-09-04 | |||||
タイトル | ||||||
タイトル | Study on La2O3/InGaAs MOS interfaces and the application to InGaAs MOSFETs | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_46ec | |||||
タイプ | thesis | |||||
ID登録 | ||||||
ID登録 | 10.15083/00075277 | |||||
ID登録タイプ | JaLC | |||||
その他のタイトル | ||||||
その他のタイトル | La2O3/InGaAs MOS界面とMOSFETへの応用に関する研究 | |||||
著者 |
張, 志宇
× 張, 志宇 |
|||||
著者別名 | ||||||
識別子 | 150139 | |||||
識別子Scheme | WEKO | |||||
姓名 | Chih-Yu, Chang | |||||
著者所属 | ||||||
著者所属 | 工学系研究科電気系工学専攻 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 学位の種別: 課程博士 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 審査委員会委員 : (主査)東京大学教授 高木 信一, 東京大学教授 平本 俊郎, 東京大学准教授 杉山 正和, 東京大学准教授 竹中 充, 東京大学准教授 小林 正治, 東京大学准教授 喜多 浩之 | |||||
書誌情報 | 発行日 2016-09-16 | |||||
著者版フラグ | ||||||
値 | none | |||||
学位名 | ||||||
学位名 | 博士(工学) | |||||
学位 | ||||||
値 | doctoral | |||||
学位授与機関 | ||||||
学位授与機関名 | University of Tokyo(東京大学) | |||||
研究科・専攻 | ||||||
Department of Electrical Engineering and Information Systems, Graduate School of Engineering (工学系研究科電気系工学専攻) | ||||||
学位授与年月日 | ||||||
学位授与年月日 | 2016-09-16 | |||||
学位授与番号 | ||||||
学位授与番号 | 12601甲第33188号 | |||||
学位記番号 | ||||||
博工第8919号 |