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Amorphous-to-crystalline transition during the early stages of thin film growth of Cr on SiO2
http://hdl.handle.net/2261/15
http://hdl.handle.net/2261/15bbf88270-52af-4179-9bd0-0ae89dc39242
名前 / ファイル | ライセンス | アクション |
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2003JAP_hu.pdf (1.4 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-02-06 | |||||
タイトル | ||||||
タイトル | Amorphous-to-crystalline transition during the early stages of thin film growth of Cr on SiO2 | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Hu, Minghui
× Hu, Minghui× Noda, Suguru× Hiroshi, Komiyama |
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著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 9 | |||||
姓名 | 野田, 優 | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 10 | |||||
姓名 | 小宮山, 宏 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The growth of sputter-deposited Cr thin films on amorphous SiO2 during the early stages was studied using transmission electron microscopy. Amorphous three-dimensional islands were first formed, and then they grew with continuously increasing density and slowly increasing size as the deposition proceeded. When these islands began to coalesce at a nominal film thickness of 2.3–3.0 nm, they abruptly crystallized into randomly oriented crystalline nuclei. The depth profile analysis by x-ray photoelectron spectroscopy indicates the existence of interfacial Cr–O interactions. After excluding the possibilities of kinetic limitation and interfacial mixing, a thermodynamic model was employed to explain the size-dependent amorphous-to-crystalline transition. Our results suggest that the interfacial-interaction-induced strain relaxation at island/substrate interfaces might result in the thermodynamic stabilization of substrate-supported amorphous islands below a critical size. | |||||
書誌情報 |
Journal of applied physics 巻 93, 号 11, p. 9336-9344, 発行日 2003-06-01 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00218979 | |||||
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収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00693547 | |||||
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内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
日本十進分類法 | ||||||
主題Scheme | NDC | |||||
主題 | 431.86 | |||||
出版者 | ||||||
出版者 | American Institute of Physics |