WEKO3
アイテム
Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
http://hdl.handle.net/2261/72647
http://hdl.handle.net/2261/72647512bfa26-bfaa-4899-815b-549e79404ed4
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
ncomms15387.pdf (820.7 kB)
|
.png)
|
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-07-03 | |||||
| タイトル | ||||||
| タイトル | Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Muneta, Iriya
× Muneta, Iriya× Kanaki, Toshiki× Ohya, Shinobu× Tanaka, Masaaki |
|||||
| 著者所属 | ||||||
| 値 | Department of Electrical Engineering and Information Systems, The University of Tokyo | |||||
| 著者所属 | ||||||
| 値 | Center for Spintronics Research Network (CSRN), The University of Tokyo | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | A major issue in the development of spintronic memory devices is the reduction of the power consumption for the magnetization reversal. For this purpose, the artificial control of the magnetic anisotropy of ferromagnetic materials is of great importance. Here, we demonstrate the control of the carrier-energy dependence of the magnetic anisotropy of the density of states (DOS) using the quantum size effect in a single-crystal ferromagnetic material, GaMnAs. We show that the mainly twofold symmetry of the magnetic anisotropy of DOS, which is attributed to the impurity band, is changed to a fourfold symmetry by enhancing the quantum size effect in the valence band of the GaMnAs quantum wells. By combination with the gate electric-field control technique, our concept of the usage of the quantum size effect for the control of the magnetism will pave the way for the ultra-low-power manipulation of magnetization in future spintronic devices. | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | UTokyo Research掲載「磁性をデザインする新たな手法を開拓」 URI: http://www.u-tokyo.ac.jp/ja/utokyo-research/research-news/pioneering-new-methods-for-designing-magnetism.html | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | UTokyo Research "Pioneering new methods for designing magnetism" URI: http://www.u-tokyo.ac.jp/en/utokyo-research/research-news/pioneering-new-methods-for-designing-magnetism.html | |||||
| 書誌情報 |
Nature communications 巻 8, p. 15387, 発行日 2017-05-22 |
|||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 2041-1723 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA12645905 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | info:doi/10.1038/ncomms15387 | |||||
| 権利 | ||||||
| 権利情報 | © The Author(s) 2017. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ | |||||
| 著者版フラグ | ||||||
| 値 | publisher | |||||
| 出版者 | ||||||
| 出版者 | Springer Nature | |||||
| 関係URI | ||||||
| 関連タイプ | isReferencedBy | |||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.u-tokyo.ac.jp/focus/ja/articles/a_00574.html | |||||
| 関係URI | ||||||
| 関連タイプ | isReferencedBy | |||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.u-tokyo.ac.jp/focus/en/articles/a_00558.html | |||||
| 関係URI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1038/ncomms15387 | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
