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TBAsを用いた(In)GaAsN混晶半導体薄膜のMOVPE成長とその光学的特性
http://hdl.handle.net/2261/20026
8c3b5652-9422-4261-a01d-5998aa4f1342
名前 / ファイル | ライセンス | アクション | |
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Item type | 学位論文 / Thesis or Dissertation(1) | |||||
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公開日 | 2011-08-08 | |||||
タイトル | ||||||
タイトル | TBAsを用いた(In)GaAsN混晶半導体薄膜のMOVPE成長とその光学的特性 | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_46ec | |||||
タイプ | thesis | |||||
著者 |
小野, 渉
× 小野, 渉 |
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著者別名 | ||||||
識別子 | ||||||
識別子 | 4610 | |||||
識別子Scheme | WEKO | |||||
姓名 | ||||||
姓名 | Ono, Wataru | |||||
著者所属 | ||||||
著者所属 | 東京大学大学院新領域創成科学研究科 基盤科学研究系 物質系専攻 | |||||
書誌情報 | 発行日 2006-03-23 | |||||
学位名 | ||||||
学位名 | 修士(科学) | |||||
学位 | ||||||
値 | master | |||||
研究科・専攻 | ||||||
新領域創成科学研究科物質系専攻 | ||||||
学位授与年月日 | ||||||
学位授与年月日 | 2006-03-23 | |||||
学位記番号 | ||||||
修創域第1575号 |