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  1. 113 工学系研究科・工学部
  2. 22 電気系工学専攻
  3. 1132225 修士論文(電気系工学専攻)
  1. 0 資料タイプ別
  2. 20 学位論文
  3. 025 修士論文

Si(111)上InGaAsエピタキシャルマイクロディスクに関する高均一成長法と電極形成プロセスの確立

http://hdl.handle.net/2261/49075
0b4b58b9-d44a-4015-a056-787fc8644bfa
名前 / ファイル ライセンス アクション
37096458.pdf 37096458.pdf (5.4 MB)
Item type 学位論文 / Thesis or Dissertation(1)
公開日 2011-09-30
タイトル
タイトル Si(111)上InGaAsエピタキシャルマイクロディスクに関する高均一成長法と電極形成プロセスの確立
言語
言語 jpn
資源タイプ
資源 http://purl.org/coar/resource_type/c_46ec
タイプ thesis
その他のタイトル
その他のタイトル Highly-Uniform Growth and Wiring Process Development for the InGaAs Epitaxial Microdiscs on Si(111) Substrate
著者 近藤, 佳幸

× 近藤, 佳幸

WEKO 5938

近藤, 佳幸

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著者所属
著者所属 東京大学大学院工学系研究科電気系工学専攻
書誌情報 発行日 2011-03-24
日本十進分類法
主題 549
主題Scheme NDC
学位名
学位名 修士(工学)
学位
値 master
研究科・専攻
工学系研究科電気系工学専攻
学位授与年月日
学位授与年月日 2011-03-24
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