{"_buckets": {"deposit": "433becb8-e951-4632-aae6-93f0575e2876"}, "_deposit": {"id": "29", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "29"}, "status": "published"}, "_oai": {"id": "oai:repository.dl.itc.u-tokyo.ac.jp:00000029"}, "item_2_biblio_info_7": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1995-06", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "2", "bibliographicPageEnd": "2619", "bibliographicPageStart": "2616", "bibliographicVolumeNumber": "5", "bibliographic_titles": [{"bibliographic_title": "IEEE transactions on applied superconductivity : a publication of the IEEE Superconductivity Committee"}]}]}, "item_2_description_13": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_2_description_5": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "In order to investigate an electric field effect in the junction, the three terminal device was fabricated. When the gate voltage of +2V (E=7x10(4) V/cm) was applied, the drain-source resistance decreased above the temperature of 100K. However, the electric field effect could not be observed below the temperature of 100K. Above the temperature of 100K, it is found that the CuO chain in PBCO behaved itself as a doped semiconductor (acceptor level = 26.5 meV).", "subitem_description_type": "Abstract"}]}, "item_2_full_name_3": {"attribute_name": "\u8457\u8005\u5225\u540d", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "122", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "\u5ca1\u90e8, \u6d0b\u4e00"}]}, {"nameIdentifiers": [{"nameIdentifier": "123", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "\u6728\u6751, \u6d69"}]}]}, "item_2_publisher_20": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC"}]}, "item_2_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a91995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE."}]}, "item_2_source_id_10": {"attribute_name": "\u66f8\u8a8c\u30ec\u30b3\u30fc\u30c9ID", "attribute_value_mlt": [{"subitem_source_identifier": "AA10791666", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_8": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "10518223", "subitem_source_identifier_type": "ISSN"}]}, "item_2_subject_15": {"attribute_name": "\u65e5\u672c\u5341\u9032\u5206\u985e\u6cd5", "attribute_value_mlt": [{"subitem_subject": "549.2", "subitem_subject_scheme": "NDC"}]}, "item_2_text_34": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"subitem_text_value": "Journal Article"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kimura, Hiroshi"}], "nameIdentifiers": [{"nameIdentifier": "119", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Okabe, Yoichi"}], "nameIdentifiers": [{"nameIdentifier": "120", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kamijo, Hiroshi"}], "nameIdentifiers": [{"nameIdentifier": "121", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-05-30"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "IEEE_A_S_1995_5_2_3_2616.pdf", "filesize": [{"value": "476.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 476200.0, "url": {"label": "IEEE_A_S_1995_5_2_3_2616.pdf", "url": "https://repository.dl.itc.u-tokyo.ac.jp/record/29/files/IEEE_A_S_1995_5_2_3_2616.pdf"}, "version_id": "a6656ff6-b268-4f99-9dce-e4124a9a295a"}]}, "item_keyword": {"attribute_name": "\u30ad\u30fc\u30ef\u30fc\u30c9", "attribute_value_mlt": [{"subitem_subject": "JOSEPHSON", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "FABRICATION OF FIELD-EFFECT DEVICES BASED ON YBACUO/PRBACUO/YBACUO JUNCTIONS", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "FABRICATION OF FIELD-EFFECT DEVICES BASED ON YBACUO/PRBACUO/YBACUO JUNCTIONS"}]}, "item_type_id": "2", "owner": "1", "path": ["12/13", "9/10/14"], "permalink_uri": "http://hdl.handle.net/2261/41", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2006-02-13"}, "publish_date": "2006-02-13", "publish_status": "0", "recid": "29", "relation": {}, "relation_version_is_last": true, "title": ["FABRICATION OF FIELD-EFFECT DEVICES BASED ON YBACUO/PRBACUO/YBACUO JUNCTIONS"], "weko_shared_id": null}