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When the gate voltage of +2V (E=7x10(4) V/cm) was applied, the drain-source resistance decreased above the temperature of 100K. However, the electric field effect could not be observed below the temperature of 100K. Above the temperature of 100K, it is found that the CuO chain in PBCO behaved itself as a doped semiconductor (acceptor level = 26.5 meV).", "subitem_description_type": "Abstract"}]}, "item_2_full_name_3": {"attribute_name": "\u8457\u8005\u5225\u540d", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "122", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "\u5ca1\u90e8, \u6d0b\u4e00"}]}, {"nameIdentifiers": [{"nameIdentifier": "123", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "\u6728\u6751, \u6d69"}]}]}, "item_2_publisher_20": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC"}]}, "item_2_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a91995 IEEE. Personal use of this material is permitted. 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