WEKO3
アイテム
ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING
http://hdl.handle.net/2261/53
http://hdl.handle.net/2261/5328245b06-1532-467b-9bf5-eddac9fe13eb
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
IEEE_E_D_1982_29_12.pdf (548.7 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2015-02-04 | |||||
| タイトル | ||||||
| タイトル | ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 著者 |
Akiyama, Tatsuo
× Akiyama, Tatsuo× Ujihiar, Yusuke× Okabe, Yoichi× Sugano, Takuo× Niki, Eiji |
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| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 2176 | |||||
| 姓名 | 岡部, 洋一 | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Ion-sensitive fieldeffect transistors (ISFET’s) have been fabricated by using silicon fiims on sapphire substrates (SOS). Using this structure Si02, Zr02, and TazO5 films are examined as hydrogenion- sensitive materials, and TazO5 fiim has been found to have the highest pH sensitivity (56 mV/pH) among them. The measured pH sensitivity of this SOS-ISFET’s is compared with the theoretical sensitivity based on the site-binding model of proton dimciation reaction on the metal oxide f i i and good agreement between them is obtained. | |||||
| 書誌情報 |
IEEE transactions on electron devices 巻 29, 号 12, p. 1936-1941, 発行日 1982-05 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 00189383 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00667820 | |||||
| 権利 | ||||||
| 権利情報 | ©1982 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | |||||
| 日本十進分類法 | ||||||
| 主題Scheme | NDC | |||||
| 主題 | 549.6 | |||||
| 出版者 | ||||||
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |||||
