{"_buckets": {"deposit": "91697ab5-105f-4484-bfe6-babcdce03de0"}, "_deposit": {"id": "657", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "657"}, "status": "published"}, "_oai": {"id": "oai:repository.dl.itc.u-tokyo.ac.jp:00000657"}, "item_2_biblio_info_7": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1982-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "12", "bibliographicPageEnd": "1941", "bibliographicPageStart": "1936", "bibliographicVolumeNumber": "29", "bibliographic_titles": [{"bibliographic_title": "IEEE transactions on electron devices"}]}]}, "item_2_description_5": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Ion-sensitive fieldeffect transistors (ISFET\u2019s) have been fabricated by using silicon fiims on sapphire substrates (SOS). Using this structure Si02, Zr02, and TazO5 films are examined as hydrogenion- sensitive materials, and TazO5 fiim has been found to have the highest pH sensitivity (56 mV/pH) among them. The measured pH sensitivity of this SOS-ISFET\u2019s is compared with the theoretical sensitivity based on the site-binding model of proton dimciation reaction on the metal oxide f i i and good agreement between them is obtained.", "subitem_description_type": "Abstract"}]}, "item_2_full_name_3": {"attribute_name": "\u8457\u8005\u5225\u540d", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "2176", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "\u5ca1\u90e8, \u6d0b\u4e00"}]}]}, "item_2_publisher_20": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC"}]}, "item_2_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a91982 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE."}]}, "item_2_source_id_10": {"attribute_name": "\u66f8\u8a8c\u30ec\u30b3\u30fc\u30c9ID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00667820", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_8": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "00189383", "subitem_source_identifier_type": "ISSN"}]}, "item_2_subject_15": {"attribute_name": "\u65e5\u672c\u5341\u9032\u5206\u985e\u6cd5", "attribute_value_mlt": [{"subitem_subject": "549.6", "subitem_subject_scheme": "NDC"}]}, "item_2_text_34": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"subitem_text_value": "Journal Article"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Akiyama, Tatsuo"}], "nameIdentifiers": [{"nameIdentifier": "2171", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ujihiar, Yusuke"}], "nameIdentifiers": [{"nameIdentifier": "2172", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Okabe, Yoichi"}], "nameIdentifiers": [{"nameIdentifier": "2173", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sugano, Takuo"}], "nameIdentifiers": [{"nameIdentifier": "2174", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Niki, Eiji"}], "nameIdentifiers": [{"nameIdentifier": "2175", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-05-30"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "IEEE_E_D_1982_29_12.pdf", "filesize": [{"value": "548.7 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 548700.0, "url": {"label": "IEEE_E_D_1982_29_12.pdf", "url": "https://repository.dl.itc.u-tokyo.ac.jp/record/657/files/IEEE_E_D_1982_29_12.pdf"}, "version_id": "38ba4f81-31aa-473f-9e78-a2dd9f46f709"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING"}]}, "item_type_id": "2", "owner": "1", "path": ["12/13", "9/10/14"], "permalink_uri": "http://hdl.handle.net/2261/53", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2015-02-04"}, "publish_date": "2015-02-04", "publish_status": "0", "recid": "657", "relation": {}, "relation_version_is_last": true, "title": ["ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING"], "weko_shared_id": null}