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Gate-voltage induced trions in suspended carbon nanotubes
http://hdl.handle.net/2261/59072
http://hdl.handle.net/2261/5907266523775-3490-476b-8583-2c6ba26f43ce
名前 / ファイル | ライセンス | アクション |
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PhysRevB.93.041402.pdf (725.3 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2016-01-07 | |||||
タイトル | ||||||
タイトル | Gate-voltage induced trions in suspended carbon nanotubes | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Yoshida, M.
× Yoshida, M.× Popert, A.× Kato, Y. K. |
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著者所属 | ||||||
著者所属 | Institute of Engineering Innovation, The University of Tokyo | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We observe trion emission from suspended carbon nanotubes where carriers are introduced electrostatically using field-effect transistor structures. The trion peak emerges below the E11 emission energy at gate voltages that coincide with the onset of bright exciton quenching. By investigating nanotubes with various chiralities, we verify that the energy separation between the bright exciton peak and the trion peak becomes smaller for larger diameter tubes. Trion binding energies that are significantly larger compared to surfactant-wrapped carbon nanotubes are obtained, and the difference is attributed to the reduced dielectric screening in suspended tubes. | |||||
書誌情報 |
Physical Review B 巻 93, 号 4, 発行日 2016-01-05 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 2469-9969 | |||||
著者版フラグ | ||||||
値 | publisher | |||||
出版者 | ||||||
出版者 | American Physical Society |