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Effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane-modified SiO2 substrates
http://hdl.handle.net/2261/17
http://hdl.handle.net/2261/17913f4e35-b11d-4206-af26-63c025b59160
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
2002JVSTA_hu.pdf (916.2 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2006-02-06 | |||||
| タイトル | ||||||
| タイトル | Effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane-modified SiO2 substrates | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 著者 |
Hu, Minghui
× Hu, Minghui× Noda, Suguru× Tsuji, Yoshiko× Okubo, Tatsuya× Yamaguchi, Yukio× Komiyama, Hiroshi |
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| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 17 | |||||
| 姓名 | 野田, 優 | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 18 | |||||
| 姓名 | 辻, 佳子 | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 19 | |||||
| 姓名 | 大久保, 達也 | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 20 | |||||
| 姓名 | 山口, 由岐夫 | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 21 | |||||
| 姓名 | 小宮山, 宏 | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane (MPTMS)-modified SiO2 substrates by sputter deposition was studied using transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray photoelectron spectroscopy. Plasma damage during sputter deposition makes surfaces of MPTMS-modified SiO2 substrates consist of small MPTMS islands several tens of nanometers in diameter and bare SiO2 areas. These MPTMS islands are composed of disordered multilayer MPTMS aggregates. The initial growth behavior of Cu on MPTMS-modified SiO2 substrates differs from that on clean SiO2 substrates, although Cu grows in three-dimensional-island mode on both of them. After a 2.5-monolayer Cu deposition on clean SiO2 substrates, spherical Cu particles were formed at a low number density of 1.3×1016 /m2 and at a long interparticle distance of 5 nm. In contrast, after the same amount of deposition on MPTMS-modified SiO2 substrates, Cu particles preferentially grow on MPTMS islands at a high number density of 3.9×1016 /m2 and at a short interparticle distance of 3 nm, but do not grow on bare SiO2 areas. The increased number density and the decreased interparticle distance indicate that Cu has a lower mobility on MPTMS islands on MPTMS-modified SiO2 substrates than on clean SiO2 substrates. This difference in Cu mobility is attributed to the enhanced interfacial interactions between Cu and S on MPTMS islands on MPTMS-modified SiO2 substrates via the formation of CuS bonds, compared with the relatively weak interfacial interactions between Cu and Si or O on clean SiO2 substrates. | |||||
| 書誌情報 |
Journal of vacuum science & technology. 2nd series. A, Vacuum, surfaces, and films : an official journal of the American Vacuum Society 巻 20, 号 3, p. 589-596, 発行日 2002-05 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 07342101 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA10635514 | |||||
| フォーマット | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | application/pdf | |||||
| 日本十進分類法 | ||||||
| 主題Scheme | NDC | |||||
| 主題 | 436.17 | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
