ログイン
言語:

WEKO3

  • トップ
  • ランキング
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

  1. 113 工学系研究科・工学部
  2. 38 化学システム工学専攻
  3. 1133810 学術雑誌論文
  1. 0 資料タイプ別
  2. 10 学術雑誌論文
  3. 014 自然科学

Effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane-modified SiO2 substrates

http://hdl.handle.net/2261/17
http://hdl.handle.net/2261/17
913f4e35-b11d-4206-af26-63c025b59160
名前 / ファイル ライセンス アクション
2002JVSTA_hu.pdf 2002JVSTA_hu.pdf (916.2 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-02-06
タイトル
タイトル Effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane-modified SiO2 substrates
言語
言語 eng
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
著者 Hu, Minghui

× Hu, Minghui

WEKO 11

Hu, Minghui

Search repository
Noda, Suguru

× Noda, Suguru

WEKO 12

Noda, Suguru

Search repository
Tsuji, Yoshiko

× Tsuji, Yoshiko

WEKO 13

Tsuji, Yoshiko

Search repository
Okubo, Tatsuya

× Okubo, Tatsuya

WEKO 14

Okubo, Tatsuya

Search repository
Yamaguchi, Yukio

× Yamaguchi, Yukio

WEKO 15

Yamaguchi, Yukio

Search repository
Komiyama, Hiroshi

× Komiyama, Hiroshi

WEKO 16

Komiyama, Hiroshi

Search repository
著者別名
識別子Scheme WEKO
識別子 17
姓名 野田, 優
著者別名
識別子Scheme WEKO
識別子 18
姓名 辻, 佳子
著者別名
識別子Scheme WEKO
識別子 19
姓名 大久保, 達也
著者別名
識別子Scheme WEKO
識別子 20
姓名 山口, 由岐夫
著者別名
識別子Scheme WEKO
識別子 21
姓名 小宮山, 宏
抄録
内容記述タイプ Abstract
内容記述 The effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane (MPTMS)-modified SiO2 substrates by sputter deposition was studied using transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray photoelectron spectroscopy. Plasma damage during sputter deposition makes surfaces of MPTMS-modified SiO2 substrates consist of small MPTMS islands several tens of nanometers in diameter and bare SiO2 areas. These MPTMS islands are composed of disordered multilayer MPTMS aggregates. The initial growth behavior of Cu on MPTMS-modified SiO2 substrates differs from that on clean SiO2 substrates, although Cu grows in three-dimensional-island mode on both of them. After a 2.5-monolayer Cu deposition on clean SiO2 substrates, spherical Cu particles were formed at a low number density of 1.3×1016 /m2 and at a long interparticle distance of 5 nm. In contrast, after the same amount of deposition on MPTMS-modified SiO2 substrates, Cu particles preferentially grow on MPTMS islands at a high number density of 3.9×1016 /m2 and at a short interparticle distance of 3 nm, but do not grow on bare SiO2 areas. The increased number density and the decreased interparticle distance indicate that Cu has a lower mobility on MPTMS islands on MPTMS-modified SiO2 substrates than on clean SiO2 substrates. This difference in Cu mobility is attributed to the enhanced interfacial interactions between Cu and S on MPTMS islands on MPTMS-modified SiO2 substrates via the formation of CuS bonds, compared with the relatively weak interfacial interactions between Cu and Si or O on clean SiO2 substrates.
書誌情報 Journal of vacuum science & technology. 2nd series. A, Vacuum, surfaces, and films : an official journal of the American Vacuum Society

巻 20, 号 3, p. 589-596, 発行日 2002-05
ISSN
収録物識別子タイプ ISSN
収録物識別子 07342101
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA10635514
フォーマット
内容記述タイプ Other
内容記述 application/pdf
日本十進分類法
主題Scheme NDC
主題 436.17
出版者
出版者 American Institute of Physics
戻る
0
views
See details
Views

Versions

Ver.1 2021-03-02 08:39:22.440723
Show All versions

Share

Mendeley Twitter Facebook Print Addthis

Cite as

エクスポート

OAI-PMH
  • OAI-PMH JPCOAR 2.0
  • OAI-PMH JPCOAR 1.0
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by WEKO3


Powered by WEKO3