Center for Function Oriented Electronics, Institute of Industrial Science, University of Tokyo 電子工学
Deaprtment of Electrical and Electronic Engineering, Shinsyu University 電子工学
抄録
We systematically studied the Ga3d and Al2p cation core level binding energies in molecular beam epitaxially grown GaAs/AlAs heterostructures by in-situ x-ray photoemission spectroscopy. The valence band offset ΔEv at GaAs/AlAs interface is found to be 0.44±0.55 eV. Furthermore, we found that the cation core level binding energies in the extreme vicinity of the interface are shifted by ～0.1 eV from their respective bulk values, which clearly indicates that the charge distribution and the resulting band offsets have a transient over a distance of at least ±2 monolayers from the heterointerface.
内容記述
小特集 機能エレクトロニクス研究センター
雑誌名
生産研究
巻
46
号
3
ページ
160 - 164
発行年
1994-03
ISSN
0037105X
書誌レコードID
AN00127075
日本十進分類法
428
出版者
東京大学生産技術研究所
出版者別名
Institute of Industrial Science, the University of Tokyo
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特集2 : 研究解説 : Transient of Electrostatic Potential at GaAs/AlAs Heterointerfaces Characterized by X-Ray Photoemission Spectroscopy
sk046003003.pdf
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