WEKO3
AND
アイテム
{"_buckets": {"deposit": "0050242b-2f88-4fb3-8597-ddfabdc0dea6"}, "_deposit": {"id": "18705", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "18705"}, "status": "published"}, "_oai": {"id": "oai:repository.dl.itc.u-tokyo.ac.jp:00018705"}, "item_4_alternative_title_1": {"attribute_name": "\u305d\u306e\u4ed6\u306e\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_alternative_title": "XPS\u6cd5\u306b\u3088\u308bGaAs/AlAs\u30d8\u30c6\u30ed\u754c\u9762\u306b\u304a\u3051\u308b\u9077\u79fb\u9818\u57df\u306e\u8a55\u4fa1"}]}, "item_4_biblio_info_7": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1994-03", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "3", "bibliographicPageEnd": "164", "bibliographicPageStart": "160", "bibliographicVolumeNumber": "46", "bibliographic_titles": [{"bibliographic_title": "\u751f\u7523\u7814\u7a76"}]}]}, "item_4_description_5": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "We systematically studied the Ga3d and Al2p cation core level binding energies in molecular beam epitaxially grown GaAs/AlAs heterostructures by in-situ x-ray photoemission spectroscopy. The valence band offset \u0394Ev at GaAs/AlAs interface is found to be 0.44\u00b10.55 eV. Furthermore, we found that the cation core level binding energies in the extreme vicinity of the interface are shifted by \uff5e0.1 eV from their respective bulk values, which clearly indicates that the charge distribution and the resulting band offsets have a transient over a distance of at least \u00b12 monolayers from the heterointerface.", "subitem_description_type": "Abstract"}]}, "item_4_description_6": {"attribute_name": "\u5185\u5bb9\u8a18\u8ff0", "attribute_value_mlt": [{"subitem_description": "\u5c0f\u7279\u96c6 \u6a5f\u80fd\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u7814\u7a76\u30bb\u30f3\u30bf\u30fc", "subitem_description_type": "Other"}]}, "item_4_full_name_3": {"attribute_name": "\u8457\u8005\u5225\u540d", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "32954", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "\u5e73\u5ddd, \u4e00\u5f66"}]}, {"nameIdentifiers": [{"nameIdentifier": "32955", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "\u6a4b\u672c, \u4f73\u7537"}]}, {"nameIdentifiers": [{"nameIdentifier": "32956", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "\u751f\u99d2, \u4fca\u660e"}]}]}, "item_4_publisher_20": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "\u6771\u4eac\u5927\u5b66\u751f\u7523\u6280\u8853\u7814\u7a76\u6240"}]}, "item_4_source_id_10": {"attribute_name": "\u66f8\u8a8c\u30ec\u30b3\u30fc\u30c9ID", "attribute_value_mlt": [{"subitem_source_identifier": "AN00127075", "subitem_source_identifier_type": "NCID"}]}, "item_4_source_id_8": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0037105X", "subitem_source_identifier_type": "ISSN"}]}, "item_4_subject_15": {"attribute_name": "\u65e5\u672c\u5341\u9032\u5206\u985e\u6cd5", "attribute_value_mlt": [{"subitem_subject": "428", "subitem_subject_scheme": "NDC"}]}, "item_4_text_21": {"attribute_name": "\u51fa\u7248\u8005\u5225\u540d", "attribute_value_mlt": [{"subitem_text_value": "Institute of Industrial Science, the University of Tokyo"}]}, "item_4_text_34": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"subitem_text_value": "Departmental Bulletin Paper"}]}, "item_4_text_4": {"attribute_name": "\u8457\u8005\u6240\u5c5e", "attribute_value_mlt": [{"subitem_text_value": "Center for Function Oriented Electronics, Institute of Industrial Science, University of Tokyo \u96fb\u5b50\u5de5\u5b66"}, {"subitem_text_value": "Deaprtment of Electrical and Electronic Engineering, Shinsyu University \u96fb\u5b50\u5de5\u5b66"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "HIRAKAWA, Kazuhiko"}], "nameIdentifiers": [{"nameIdentifier": "32951", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "HASHIMOTO, Yoshio"}], "nameIdentifiers": [{"nameIdentifier": "32952", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "IKOMA, Toshiaki"}], "nameIdentifiers": [{"nameIdentifier": "32953", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-06-08"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "sk046003003.pdf", "filesize": [{"value": "541.7 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 541700.0, "url": {"label": "sk046003003.pdf", "url": "https://repository.dl.itc.u-tokyo.ac.jp/record/18705/files/sk046003003.pdf"}, "version_id": "5146b4a6-c03c-4e83-8bfe-f3e65ad15cb2"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "departmental bulletin paper", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "\u7279\u96c62 : \u7814\u7a76\u89e3\u8aac : Transient of Electrostatic Potential at GaAs/AlAs Heterointerfaces Characterized by X-Ray Photoemission Spectroscopy", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "\u7279\u96c62 : \u7814\u7a76\u89e3\u8aac : Transient of Electrostatic Potential at GaAs/AlAs Heterointerfaces Characterized by X-Ray Photoemission Spectroscopy"}]}, "item_type_id": "4", "owner": "1", "path": ["171/1108/1270/1290", "9/504/1111/1272/1291"], "permalink_uri": "http://hdl.handle.net/2261/49918", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2012-11-16"}, "publish_date": "2012-11-16", "publish_status": "0", "recid": "18705", "relation": {}, "relation_version_is_last": true, "title": ["\u7279\u96c62 : \u7814\u7a76\u89e3\u8aac : Transient of Electrostatic Potential at GaAs/AlAs Heterointerfaces Characterized by X-Ray Photoemission Spectroscopy"], "weko_shared_id": null}
特集2 : 研究解説 : Transient of Electrostatic Potential at GaAs/AlAs Heterointerfaces Characterized by X-Ray Photoemission Spectroscopy
http://hdl.handle.net/2261/49918
b4be7a86-a975-4556-9019-83ab69eadade
名前 / ファイル | ライセンス | アクション | |
---|---|---|---|
![]() |
|
Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2012-11-16 | |||||
タイトル | ||||||
タイトル | 特集2 : 研究解説 : Transient of Electrostatic Potential at GaAs/AlAs Heterointerfaces Characterized by X-Ray Photoemission Spectroscopy | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | departmental bulletin paper | |||||
その他のタイトル | ||||||
その他のタイトル | XPS法によるGaAs/AlAsヘテロ界面における遷移領域の評価 | |||||
著者 |
HIRAKAWA, Kazuhiko
× HIRAKAWA, Kazuhiko× HASHIMOTO, Yoshio× IKOMA, Toshiaki |
|||||
著者別名 | ||||||
識別子 | ||||||
識別子 | 32954 | |||||
識別子Scheme | WEKO | |||||
姓名 | ||||||
姓名 | 平川, 一彦 | |||||
著者別名 | ||||||
識別子 | ||||||
識別子 | 32955 | |||||
識別子Scheme | WEKO | |||||
姓名 | ||||||
姓名 | 橋本, 佳男 | |||||
著者別名 | ||||||
識別子 | ||||||
識別子 | 32956 | |||||
識別子Scheme | WEKO | |||||
姓名 | ||||||
姓名 | 生駒, 俊明 | |||||
著者所属 | ||||||
著者所属 | Center for Function Oriented Electronics, Institute of Industrial Science, University of Tokyo 電子工学 | |||||
著者所属 | ||||||
著者所属 | Deaprtment of Electrical and Electronic Engineering, Shinsyu University 電子工学 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We systematically studied the Ga3d and Al2p cation core level binding energies in molecular beam epitaxially grown GaAs/AlAs heterostructures by in-situ x-ray photoemission spectroscopy. The valence band offset ΔEv at GaAs/AlAs interface is found to be 0.44±0.55 eV. Furthermore, we found that the cation core level binding energies in the extreme vicinity of the interface are shifted by ~0.1 eV from their respective bulk values, which clearly indicates that the charge distribution and the resulting band offsets have a transient over a distance of at least ±2 monolayers from the heterointerface. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 小特集 機能エレクトロニクス研究センター | |||||
書誌情報 |
生産研究 巻 46, 号 3, p. 160-164, 発行日 1994-03 |
|||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0037105X | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00127075 | |||||
日本十進分類法 | ||||||
主題 | 428 | |||||
主題Scheme | NDC | |||||
出版者 | ||||||
出版者 | 東京大学生産技術研究所 | |||||
出版者別名 | ||||||
Institute of Industrial Science, the University of Tokyo |