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Combined Surface Activation Approaches to Low-Temperature Wafer Bonding for Three-Dimensional Integration
https://doi.org/10.15083/00075124
https://doi.org/10.15083/00075124e9e7752b-f1cf-4141-a217-409b62faae03
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A33035_summary.pdf (131.1 kB)
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A33035_abstract.pdf (75.2 kB)
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A33035_review.pdf (80.6 kB)
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Item type | 学位論文 / Thesis or Dissertation(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2018-09-04 | |||||
タイトル | ||||||
タイトル | Combined Surface Activation Approaches to Low-Temperature Wafer Bonding for Three-Dimensional Integration | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_46ec | |||||
タイプ | thesis | |||||
ID登録 | ||||||
ID登録 | 10.15083/00075124 | |||||
ID登録タイプ | JaLC | |||||
その他のタイトル | ||||||
その他のタイトル | 三次元集積化のための複合表面活性化手法による低温ウェハ接合 | |||||
著者 |
赫, 然
× 赫, 然 |
|||||
著者別名 | ||||||
識別子 | 149833 | |||||
識別子Scheme | WEKO | |||||
姓名 | He, Ran | |||||
著者所属 | ||||||
著者所属 | 工学系研究科精密工学専攻 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 学位の種別: 課程博士 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 審査委員会委員 : (主査)東京大学教授 須賀 唯知, 東京大学教授 国枝 正典, 東京大学教授 金 範埈, 東京大学准教授 日暮 栄治, 東北大学教授 島津 武仁 | |||||
書誌情報 | 発行日 2016-05-19 | |||||
著者版フラグ | ||||||
値 | none | |||||
学位名 | ||||||
学位名 | 博士(工学) | |||||
学位 | ||||||
値 | doctoral | |||||
学位授与機関 | ||||||
学位授与機関名 | University of Tokyo(東京大学) | |||||
研究科・専攻 | ||||||
Department of Precision Engineering, Graduate School of Engineering (工学系研究科精密工学専攻) | ||||||
学位授与年月日 | ||||||
学位授与年月日 | 2016-05-19 | |||||
学位授与番号 | ||||||
学位授与番号 | 12601甲第33035号 | |||||
学位記番号 | ||||||
博工第8850号 |