We have fabricated a prototype of interface devices between SFQ and CMOS circuits using HTS quasi-particle injection devices. By the injection of quasi-particles, the bridge area becomes resistive and high voltage appears at the drain electrode. As a test of device operation, we applied the signal of a function generator to the gate electrode and observed that the device successfully repeated on/off operation. We also succeeded in explaining the device characteristics by considering the thermal effects.
雑誌名
IEICE transactions on electronics
巻
E85-C
号
3
ページ
650 - 653
発行年
2002-05
ISSN
09168524
書誌レコードID
AA10826283
フォーマット
application/pdf
日本十進分類法
549.2
出版者
Institute of Electronics, Information and Communication Engineers
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HTS Quasi-Particle Injection Devices for Interfaces between SFQ and CMOS Circuits
IEICE2002_E85C_3_650.pdf
(266.09KB)
