WEKO3
AND
アイテム
{"_buckets": {"deposit": "298276e7-ea75-4ff4-a4cc-c953ab3905eb"}, "_deposit": {"id": "10", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "10"}, "status": "published"}, "_oai": {"id": "oai:repository.dl.itc.u-tokyo.ac.jp:00000010"}, "item_2_biblio_info_7": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2003-11", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "6", "bibliographicPageEnd": "2516", "bibliographicPageStart": "2512", "bibliographicVolumeNumber": "21", "bibliographic_titles": [{"bibliographic_title": "Journal of vacuum science \u0026 technology. Second series. B, Microelectronics and nanometer structures, processing, measurement and phenomena"}]}]}, "item_2_description_13": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_2_description_5": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "The effects of substrate heating and substrate biasing on the initial stage of nonepitaxial heterogeneous growth of TiN on Si(111) was studied by using high-resolution transmission electron microscopy. Although TiN films deposited at room temperature (RT) undergo a transition from continuous amorphous films to polycrystalline films with three-dimensional grains when the film thickness is increased from ~1 to 2 nm, crystallization occurred at a substrate temperature, T/sub s/=570 K, even for film thicknesses less than 1 nm. Compared with growth at T/sub s/=RT, at T/sub s/=570 K, the initial lateral grain size was only slightly larger, and the grains tended to be spherical and discontinuous at higher film thickness. At a substrate bias voltage, V/sub b/=-70 V, the grains were laterally larger and planar. At a film thickness of 50 nm, the films deposited at V/sub b/=-70 V showed the thermodynamically favored (200) preferred orientation, whereas the films deposited at T/sub s/=570 K showed (111) preferred orientation with a weak (200) peak.", "subitem_description_type": "Abstract"}]}, "item_2_full_name_3": {"attribute_name": "\u8457\u8005\u5225\u540d", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "26", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "\u91ce\u7530, \u512a"}]}, {"nameIdentifiers": [{"nameIdentifier": "27", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "\u5ca1\u7530, \u6587\u96c4"}]}, {"nameIdentifiers": [{"nameIdentifier": "28", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "\u5c0f\u5bae\u5c71, \u5b8f"}]}]}, "item_2_publisher_20": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_2_source_id_10": {"attribute_name": "\u66f8\u8a8c\u30ec\u30b3\u30fc\u30c9ID", "attribute_value_mlt": [{"subitem_source_identifier": "AA10804928", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_8": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0734211X", "subitem_source_identifier_type": "ISSN"}]}, "item_2_subject_15": {"attribute_name": "\u65e5\u672c\u5341\u9032\u5206\u985e\u6cd5", "attribute_value_mlt": [{"subitem_subject": "431.86", "subitem_subject_scheme": "NDC"}]}, "item_2_text_34": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"subitem_text_value": "Journal Article"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Li, Tu-Qiang"}], "nameIdentifiers": [{"nameIdentifier": "22", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Noda, Suguru"}], "nameIdentifiers": [{"nameIdentifier": "23", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Okada, Fumio"}], "nameIdentifiers": [{"nameIdentifier": "24", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Komiyama, Hiroshi"}], "nameIdentifiers": [{"nameIdentifier": "25", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-05-30"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "2003JVSTB_li.pdf", "filesize": [{"value": "1.1 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 1100000.0, "url": {"label": "2003JVSTB_li.pdf", "url": "https://repository.dl.itc.u-tokyo.ac.jp/record/10/files/2003JVSTB_li.pdf"}, "version_id": "1e1c61cf-0782-4f69-a0b6-16edf27a73a9"}]}, "item_keyword": {"attribute_name": "\u30ad\u30fc\u30ef\u30fc\u30c9", "attribute_value_mlt": [{"subitem_subject": "Titanium nitride", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Nanofilms", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Nanostructured materials", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Thin films", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Epitaxial growth", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Interfacial energy", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Crystal orientation", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms"}]}, "item_type_id": "2", "owner": "1", "path": ["9/10/11", "6/7/8"], "permalink_uri": "http://hdl.handle.net/2261/18", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2006-02-06"}, "publish_date": "2006-02-06", "publish_status": "0", "recid": "10", "relation": {}, "relation_version_is_last": true, "title": ["Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms"], "weko_shared_id": 2}
Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms
http://hdl.handle.net/2261/18
f13fe070-d501-4600-ab03-6046f73c8827
名前 / ファイル | ライセンス | アクション | |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-02-06 | |||||
タイトル | ||||||
タイトル | Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題 | Titanium nitride | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Nanofilms | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Nanostructured materials | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Thin films | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Epitaxial growth | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Interfacial energy | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Crystal orientation | |||||
主題Scheme | Other | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Li, Tu-Qiang
× Li, Tu-Qiang× Noda, Suguru× Okada, Fumio× Komiyama, Hiroshi |
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著者別名 | ||||||
識別子 | ||||||
識別子 | 26 | |||||
識別子Scheme | WEKO | |||||
姓名 | ||||||
姓名 | 野田, 優 | |||||
著者別名 | ||||||
識別子 | ||||||
識別子 | 27 | |||||
識別子Scheme | WEKO | |||||
姓名 | ||||||
姓名 | 岡田, 文雄 | |||||
著者別名 | ||||||
識別子 | ||||||
識別子 | 28 | |||||
識別子Scheme | WEKO | |||||
姓名 | ||||||
姓名 | 小宮山, 宏 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The effects of substrate heating and substrate biasing on the initial stage of nonepitaxial heterogeneous growth of TiN on Si(111) was studied by using high-resolution transmission electron microscopy. Although TiN films deposited at room temperature (RT) undergo a transition from continuous amorphous films to polycrystalline films with three-dimensional grains when the film thickness is increased from ~1 to 2 nm, crystallization occurred at a substrate temperature, T/sub s/=570 K, even for film thicknesses less than 1 nm. Compared with growth at T/sub s/=RT, at T/sub s/=570 K, the initial lateral grain size was only slightly larger, and the grains tended to be spherical and discontinuous at higher film thickness. At a substrate bias voltage, V/sub b/=-70 V, the grains were laterally larger and planar. At a film thickness of 50 nm, the films deposited at V/sub b/=-70 V showed the thermodynamically favored (200) preferred orientation, whereas the films deposited at T/sub s/=570 K showed (111) preferred orientation with a weak (200) peak. | |||||
書誌情報 |
Journal of vacuum science & technology. Second series. B, Microelectronics and nanometer structures, processing, measurement and phenomena 巻 21, 号 6, p. 2512-2516, 発行日 2003-11 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0734211X | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10804928 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
日本十進分類法 | ||||||
主題 | 431.86 | |||||
主題Scheme | NDC | |||||
出版者 | ||||||
出版者 | American Institute of Physics |