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Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms
http://hdl.handle.net/2261/18
http://hdl.handle.net/2261/18f13fe070-d501-4600-ab03-6046f73c8827
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
2003JVSTB_li.pdf (1.1 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2006-02-06 | |||||
| タイトル | ||||||
| タイトル | Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Titanium nitride | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Nanofilms | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Nanostructured materials | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Thin films | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Epitaxial growth | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Interfacial energy | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Crystal orientation | |||||
| 資源タイプ | ||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 著者 |
Li, Tu-Qiang
× Li, Tu-Qiang× Noda, Suguru× Okada, Fumio× Komiyama, Hiroshi |
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| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 26 | |||||
| 姓名 | 野田, 優 | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 27 | |||||
| 姓名 | 岡田, 文雄 | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 28 | |||||
| 姓名 | 小宮山, 宏 | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The effects of substrate heating and substrate biasing on the initial stage of nonepitaxial heterogeneous growth of TiN on Si(111) was studied by using high-resolution transmission electron microscopy. Although TiN films deposited at room temperature (RT) undergo a transition from continuous amorphous films to polycrystalline films with three-dimensional grains when the film thickness is increased from ~1 to 2 nm, crystallization occurred at a substrate temperature, T/sub s/=570 K, even for film thicknesses less than 1 nm. Compared with growth at T/sub s/=RT, at T/sub s/=570 K, the initial lateral grain size was only slightly larger, and the grains tended to be spherical and discontinuous at higher film thickness. At a substrate bias voltage, V/sub b/=-70 V, the grains were laterally larger and planar. At a film thickness of 50 nm, the films deposited at V/sub b/=-70 V showed the thermodynamically favored (200) preferred orientation, whereas the films deposited at T/sub s/=570 K showed (111) preferred orientation with a weak (200) peak. | |||||
| bibliographic_information |
Journal of vacuum science & technology. Second series. B, Microelectronics and nanometer structures, processing, measurement and phenomena 巻 21, 号 6, p. 2512-2516, 発行日 2003-11 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0734211X | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA10804928 | |||||
| フォーマット | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | application/pdf | |||||
| 日本十進分類法 | ||||||
| 主題Scheme | NDC | |||||
| 主題 | 431.86 | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
