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研究速報 : 0.15μm部分空乏型SOI MOSFETにおける1V以下での基板浮遊効果
http://hdl.handle.net/2261/53126
237977f2-578c-42c8-8e5e-801189fd0a40
| 名前 / ファイル | ライセンス | アクション | |
|---|---|---|---|
sk049004010.pdf (634.9 kB)
|
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2013-02-04 | |||||
| タイトル | ||||||
| タイトル | 研究速報 : 0.15μm部分空乏型SOI MOSFETにおける1V以下での基板浮遊効果 | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| 資源タイプ | ||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | departmental bulletin paper | |||||
| その他のタイトル | ||||||
| その他のタイトル | Floating Body Effect in 0.15μm Partially Depleted SOI MOSFETs below 1V | |||||
| 著者 |
更屋, 拓哉
× 更屋, 拓哉× 高宮, 真× デュエト, トラン ゴック× 平本, 俊郎× 生駒, 俊明 |
|||||
| 著者別名 | ||||||
| 識別子 | ||||||
| 識別子 | 30988 | |||||
| 識別子Scheme | WEKO | |||||
| 姓名 | ||||||
| 姓名 | Saraya, Takuya | |||||
| 著者別名 | ||||||
| 識別子 | ||||||
| 識別子 | 30989 | |||||
| 識別子Scheme | WEKO | |||||
| 姓名 | ||||||
| 姓名 | Takamiya, Makoto | |||||
| 著者別名 | ||||||
| 識別子 | ||||||
| 識別子 | 30990 | |||||
| 識別子Scheme | WEKO | |||||
| 姓名 | ||||||
| 姓名 | Duyet, Tran Ngoc | |||||
| 著者別名 | ||||||
| 識別子 | ||||||
| 識別子 | 30991 | |||||
| 識別子Scheme | WEKO | |||||
| 姓名 | ||||||
| 姓名 | Hiramoto, Toshiro | |||||
| 著者別名 | ||||||
| 識別子 | ||||||
| 識別子 | 30992 | |||||
| 識別子Scheme | WEKO | |||||
| 姓名 | ||||||
| 姓名 | Ikoma, Toshiaki | |||||
| 著者所属 | ||||||
| 東京大学生産技術研究所第3部 集積デバイスエンジニアリング | ||||||
| 著者所属 | ||||||
| 東京大学大規模集積システム設計教育研究センター 集積デバイスエンジニアリング | ||||||
| 著者所属 | ||||||
| (株)テキサス・インスツルメンツ筑波研究開発センター 概念エレクトロニクス | ||||||
| 書誌情報 |
生産研究 巻 49, 号 4, p. 231-234, 発行日 1997-04 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0037105X | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AN00127075 | |||||
| 日本十進分類法 | ||||||
| 主題 | 549 | |||||
| 主題Scheme | NDC | |||||
| 出版者 | ||||||
| 出版者 | 東京大学生産技術研究所 | |||||
| 出版者別名 | ||||||
| Institute of Industrial Science, the University of Tokyo | ||||||
