WEKO3
アイテム
{"_buckets": {"deposit": "d8322692-a8d9-47ea-959f-856ad7acdde5"}, "_deposit": {"id": "589", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "589"}, "status": "published"}, "_oai": {"id": "oai:repository.dl.itc.u-tokyo.ac.jp:00000589", "sets": ["14", "8"]}, "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2004-03-30", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "1-4", "bibliographicPageEnd": "379", "bibliographicPageStart": "372", "bibliographicVolumeNumber": "225", "bibliographic_titles": [{"bibliographic_title": "Applied surface science : a journal devoted to the properties of interfaces in relation to the synthesis and behaviour of materials"}]}]}, "item_2_description_5": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Deposition flux is an important factor that determines the structures of vapor-deposited materials. However, controlling this flux over a wide range is difficult using only a single apparatus. In this work, we developed a simple method, called combinatorial masked deposition (CMD), that enables a series of deposition fluxes and their respective distribution to be realized on a single sample by just setting a mask with holes of different sizes above a substrate. The degree of reduction in deposition flux can be controlled by the hole size and distance between the given point and the hole. The characteristics and applicability of CMD were evaluated by two experiments. In the first experiment, Cu nanoparticles were formed by sputter-deposition on a-SiO2 at different Cu deposition fluxes. The nanoparticles had a higher number density and smaller size when deposited at 0.80 nm/s for 2.5 s than when deposited at 0.014 nm/s for 140 s. In the second experiment, metal-induced crystallization of amorphous Si (a-Si) was done with spatially distributed Ni additives. The CMD method can realize a series of Ni flux distributions and was successfully used to form 100 different profiles of Ni concentration on a single sample, thus enabling efficient screening of concentration profiles to enhance grain size. © 2003 Elsevier B.V. All rights reserved.", "subitem_description_type": "Abstract"}]}, "item_2_full_name_3": {"attribute_name": "著者別名", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "2050", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "野田, 優"}]}, {"nameIdentifiers": [{"nameIdentifier": "2051", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "梶川, 裕矢"}]}, {"nameIdentifiers": [{"nameIdentifier": "2052", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "小宮山, 宏"}]}]}, "item_2_publisher_20": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Elsevier"}]}, "item_2_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "info:doi/10.1016/j.apsusc.2003.10.027", "subitem_relation_type_select": "DOI"}}]}, "item_2_select_14": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_2_source_id_10": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA10503400", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_8": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "01694332", "subitem_source_identifier_type": "ISSN"}]}, "item_2_subject_15": {"attribute_name": "日本十進分類法", "attribute_value_mlt": [{"subitem_subject": "571.6", "subitem_subject_scheme": "NDC"}]}, "item_2_text_34": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"subitem_text_value": "Journal Article"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Noda, Suguru"}], "nameIdentifiers": [{"nameIdentifier": "2047", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kajikawa, Yuya"}], "nameIdentifiers": [{"nameIdentifier": "2048", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Komiyama, Hiroshi"}], "nameIdentifiers": [{"nameIdentifier": "2049", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-05-30"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "2004ASS_noda.pdf", "filesize": [{"value": "296.6 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 296600.0, "url": {"label": "2004ASS_noda.pdf", "url": "https://repository.dl.itc.u-tokyo.ac.jp/record/589/files/2004ASS_noda.pdf"}, "version_id": "02123756-b116-4653-83a8-d0796c692e9b"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Sputter deposition", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Vapors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Masks", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Nanostructured materials", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Crystallization", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Additives", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Grain size and shape", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Amorphous materials", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Substrates", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Combinatorial masked deposition: Simple method to control deposition flux and its spatial distribution", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Combinatorial masked deposition: Simple method to control deposition flux and its spatial distribution"}]}, "item_type_id": "2", "owner": "1", "path": ["14", "8"], "permalink_uri": "http://hdl.handle.net/2261/16", "pubdate": {"attribute_name": "公開日", "attribute_value": "2013-05-16"}, "publish_date": "2013-05-16", "publish_status": "0", "recid": "589", "relation": {}, "relation_version_is_last": true, "title": ["Combinatorial masked deposition: Simple method to control deposition flux and its spatial distribution"], "weko_shared_id": 2}
Combinatorial masked deposition: Simple method to control deposition flux and its spatial distribution
http://hdl.handle.net/2261/16
http://hdl.handle.net/2261/160b45ed43-23e4-4fcc-90c2-9d02af49f3fa
名前 / ファイル | ライセンス | アクション |
---|---|---|
2004ASS_noda.pdf (296.6 kB)
|
|
Item type | 学術雑誌論文 / Journal Article(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2013-05-16 | |||||
タイトル | ||||||
タイトル | Combinatorial masked deposition: Simple method to control deposition flux and its spatial distribution | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題 | Sputter deposition | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Vapors | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Masks | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Nanostructured materials | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Crystallization | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Additives | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Grain size and shape | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Amorphous materials | |||||
主題Scheme | Other | |||||
キーワード | ||||||
主題 | Substrates | |||||
主題Scheme | Other | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Noda, Suguru
× Noda, Suguru× Kajikawa, Yuya× Komiyama, Hiroshi |
|||||
著者別名 | ||||||
識別子 | 2050 | |||||
識別子Scheme | WEKO | |||||
姓名 | 野田, 優 | |||||
著者別名 | ||||||
識別子 | 2051 | |||||
識別子Scheme | WEKO | |||||
姓名 | 梶川, 裕矢 | |||||
著者別名 | ||||||
識別子 | 2052 | |||||
識別子Scheme | WEKO | |||||
姓名 | 小宮山, 宏 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Deposition flux is an important factor that determines the structures of vapor-deposited materials. However, controlling this flux over a wide range is difficult using only a single apparatus. In this work, we developed a simple method, called combinatorial masked deposition (CMD), that enables a series of deposition fluxes and their respective distribution to be realized on a single sample by just setting a mask with holes of different sizes above a substrate. The degree of reduction in deposition flux can be controlled by the hole size and distance between the given point and the hole. The characteristics and applicability of CMD were evaluated by two experiments. In the first experiment, Cu nanoparticles were formed by sputter-deposition on a-SiO2 at different Cu deposition fluxes. The nanoparticles had a higher number density and smaller size when deposited at 0.80 nm/s for 2.5 s than when deposited at 0.014 nm/s for 140 s. In the second experiment, metal-induced crystallization of amorphous Si (a-Si) was done with spatially distributed Ni additives. The CMD method can realize a series of Ni flux distributions and was successfully used to form 100 different profiles of Ni concentration on a single sample, thus enabling efficient screening of concentration profiles to enhance grain size. © 2003 Elsevier B.V. All rights reserved. | |||||
書誌情報 |
Applied surface science : a journal devoted to the properties of interfaces in relation to the synthesis and behaviour of materials 巻 225, 号 1-4, p. 372-379, 発行日 2004-03-30 |
|||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 01694332 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10503400 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1016/j.apsusc.2003.10.027 | |||||
著者版フラグ | ||||||
値 | author | |||||
日本十進分類法 | ||||||
主題 | 571.6 | |||||
主題Scheme | NDC | |||||
出版者 | ||||||
出版者 | Elsevier |