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  1. 113 工学系研究科・工学部
  2. 38 化学システム工学専攻
  3. 1133810 学術雑誌論文
  1. 0 資料タイプ別
  2. 10 学術雑誌論文
  3. 015 技術・工学

Combinatorial masked deposition: Simple method to control deposition flux and its spatial distribution

http://hdl.handle.net/2261/16
0b45ed43-23e4-4fcc-90c2-9d02af49f3fa
名前 / ファイル ライセンス アクション
2004ASS_noda.pdf 2004ASS_noda.pdf (296.6 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2013-05-16
タイトル
タイトル Combinatorial masked deposition: Simple method to control deposition flux and its spatial distribution
言語
言語 eng
キーワード
主題 Sputter deposition
主題Scheme Other
キーワード
主題 Vapors
主題Scheme Other
キーワード
主題 Masks
主題Scheme Other
キーワード
主題 Nanostructured materials
主題Scheme Other
キーワード
主題 Crystallization
主題Scheme Other
キーワード
主題 Additives
主題Scheme Other
キーワード
主題 Grain size and shape
主題Scheme Other
キーワード
主題 Amorphous materials
主題Scheme Other
キーワード
主題 Substrates
主題Scheme Other
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
著者 Noda, Suguru

× Noda, Suguru

WEKO 2047

Noda, Suguru

Search repository
Kajikawa, Yuya

× Kajikawa, Yuya

WEKO 2048

Kajikawa, Yuya

Search repository
Komiyama, Hiroshi

× Komiyama, Hiroshi

WEKO 2049

Komiyama, Hiroshi

Search repository
著者別名
識別子
識別子 2050
識別子Scheme WEKO
姓名
姓名 野田, 優
著者別名
識別子
識別子 2051
識別子Scheme WEKO
姓名
姓名 梶川, 裕矢
著者別名
識別子
識別子 2052
識別子Scheme WEKO
姓名
姓名 小宮山, 宏
抄録
内容記述タイプ Abstract
内容記述 Deposition flux is an important factor that determines the structures of vapor-deposited materials. However, controlling this flux over a wide range is difficult using only a single apparatus. In this work, we developed a simple method, called combinatorial masked deposition (CMD), that enables a series of deposition fluxes and their respective distribution to be realized on a single sample by just setting a mask with holes of different sizes above a substrate. The degree of reduction in deposition flux can be controlled by the hole size and distance between the given point and the hole. The characteristics and applicability of CMD were evaluated by two experiments. In the first experiment, Cu nanoparticles were formed by sputter-deposition on a-SiO2 at different Cu deposition fluxes. The nanoparticles had a higher number density and smaller size when deposited at 0.80 nm/s for 2.5 s than when deposited at 0.014 nm/s for 140 s. In the second experiment, metal-induced crystallization of amorphous Si (a-Si) was done with spatially distributed Ni additives. The CMD method can realize a series of Ni flux distributions and was successfully used to form 100 different profiles of Ni concentration on a single sample, thus enabling efficient screening of concentration profiles to enhance grain size. © 2003 Elsevier B.V. All rights reserved.
書誌情報 Applied surface science : a journal devoted to the properties of interfaces in relation to the synthesis and behaviour of materials

巻 225, 号 1-4, p. 372-379, 発行日 2004-03-30
ISSN
収録物識別子タイプ ISSN
収録物識別子 01694332
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA10503400
DOI
関連識別子
識別子タイプ DOI
関連識別子 info:doi/10.1016/j.apsusc.2003.10.027
著者版フラグ
値 author
日本十進分類法
主題 571.6
主題Scheme NDC
出版者
出版者 Elsevier
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