WEKO3
アイテム
Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation
http://hdl.handle.net/2261/20
http://hdl.handle.net/2261/2049a48073-fe22-49e9-ab80-b56c37e39e26
名前 / ファイル | ライセンス | アクション |
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2003JVSTA_li.pdf (1.1 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-02-06 | |||||
タイトル | ||||||
タイトル | Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Titanium nitride | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Magnetron sputtering | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Silicon | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Partial pressure | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Crystals | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Crystal growth | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Amorphous materials | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Li, Tu-Qiang
× Li, Tu-Qiang× Noda, Suguru× Komiyama, Hiroshi× Yamamoto, Takahisa× Ikuhara, Yuichi |
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著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 43 | |||||
姓名 | 野田, 優 | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 44 | |||||
姓名 | 小宮山, 宏 | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 45 | |||||
姓名 | 山本, 剛久 | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 46 | |||||
姓名 | 幾原, 雄一 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron dc sputtering onto (111)-oriented Si substrates was investigated by using high-resolution transmission electron microscopy (HRTEM). During the initial growth stage, a continuous amorphous layer was observed when the deposited film was less than 1 nm thick. Crystal nucleation occurred from the amorphous layer when the film grew to about 2 nm thick. No preferred orientation was found for the initial crystal nuclei. The growth of the crystal grains depended on the N/sub 2/ partial pressure, P/sub N2/. Increasing P/sub N2/ from 0.047 to 0.47 Pa enhanced lateral grain growth and coalescence between grains. For P/sub N2/=0.47 Pa, planar grains with a large lateral dimension were found formed by grain growth and coalescence, inducing a (200) film orientation. For films formed at P/sub N2/=0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate, and was indicated to be primarily SiN/sub x/ by x-ray photoelectron spectroscopy and HRTEM. This interlayer was less than 0.5 nm thick in films formed at P/sub N2/=0.047 Pa | |||||
書誌情報 |
Journal of vacuum science & technology. 2nd series. A, Vacuum, surfaces, and films : an official journal of the American Vacuum Society 巻 21, 号 5, p. 1717-1723, 発行日 2003-09 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 07342101 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10635514 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
日本十進分類法 | ||||||
主題Scheme | NDC | |||||
主題 | 431.86 | |||||
出版者 | ||||||
出版者 | American Institute of Physics |