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{"_buckets": {"deposit": "4a7784f4-8a60-47e1-b393-e7f82aa30ccd"}, "_deposit": {"id": "664", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "664"}, "status": "published"}, "_oai": {"id": "oai:repository.dl.itc.u-tokyo.ac.jp:00000664", "sets": ["11", "150"]}, "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2014-07-25", "bibliographicIssueDateType": "Issued"}, "bibliographicPageStart": "032106", "bibliographicVolumeNumber": "105", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Letters"}]}]}, "item_2_description_6": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "UTokyo Research掲載「次世代パワーデバイスの理想性能に近づく絶縁膜材料作製手法を開発」 URI: http://www.u-tokyo.ac.jp/ja/utokyo-research/research-news/advanced-dielectric-film-growth-technique-for-next-generation-power-devices/", "subitem_description_type": "Other"}, {"subitem_description": "UTokyo Research \"Advanced dielectric film growth technique for next generation power devices\" URI: http://www.u-tokyo.ac.jp/en/utokyo-research/research-news/advanced-dielectric-film-growth-technique-for-next-generation-power-devices/", "subitem_description_type": "Other"}]}, "item_2_publisher_20": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "AIP Publishing LLC"}]}, "item_2_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "info:doi/10.1063/1.4891166", "subitem_relation_type_select": "DOI"}}]}, "item_2_relation_25": {"attribute_name": "関係URI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://www.u-tokyo.ac.jp/ja/utokyo-research/research-news/advanced-dielectric-film-growth-technique-for-next-generation-power-devices/", "subitem_relation_type_select": "URI"}}, {"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://www.u-tokyo.ac.jp/en/utokyo-research/research-news/advanced-dielectric-film-growth-technique-for-next-generation-power-devices/", "subitem_relation_type_select": "URI"}}, {"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://scitation.aip.org/content/aip/journal/apl/105/3/10.1063/1.4891166", "subitem_relation_type_select": "URI"}}]}, "item_2_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "(c) 2014 AIP Publishing LLC"}]}, "item_2_source_id_8": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "ISSN"}, {"subitem_source_identifier": "1077-3118", "subitem_source_identifier_type": "ISSN"}]}, "item_2_text_34": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"subitem_text_value": "Journal Article"}]}, "item_2_text_4": {"attribute_name": "著者所属", "attribute_value_mlt": [{"subitem_text_value": "Department of Materials Engineering, The University of Tokyo"}, {"subitem_text_value": "JST-PRESTO, Japan Science and Technology Agency (JST)"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kikuchi, Richard Heihachiro"}], "nameIdentifiers": [{"nameIdentifier": "2338", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kita, Koji"}], "nameIdentifiers": [{"nameIdentifier": "2339", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-05-30"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "1.4891166.pdf", "filesize": [{"value": "469.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 469200.0, "url": {"label": "1.4891166.pdf", "url": "https://repository.dl.itc.u-tokyo.ac.jp/record/664/files/1.4891166.pdf"}, "version_id": "c4b3e626-9d56-4cc6-892a-9eb9078edf5d"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Fabrication of SiO2/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Fabrication of SiO2/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation"}]}, "item_type_id": "2", "owner": "1", "path": ["11", "150"], "permalink_uri": "http://hdl.handle.net/2261/56073", "pubdate": {"attribute_name": "公開日", "attribute_value": "2015-02-04"}, "publish_date": "2015-02-04", "publish_status": "0", "recid": "664", "relation": {}, "relation_version_is_last": true, "title": ["Fabrication of SiO2/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation"], "weko_shared_id": 2}
Fabrication of SiO2/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation
http://hdl.handle.net/2261/56073
http://hdl.handle.net/2261/560739c1047ef-7b84-46d5-b9a1-0205fdb75c32
名前 / ファイル | ライセンス | アクション |
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1.4891166.pdf (469.2 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2015-02-04 | |||||
タイトル | ||||||
タイトル | Fabrication of SiO2/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Kikuchi, Richard Heihachiro
× Kikuchi, Richard Heihachiro× Kita, Koji |
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著者所属 | ||||||
著者所属 | Department of Materials Engineering, The University of Tokyo | |||||
著者所属 | ||||||
著者所属 | JST-PRESTO, Japan Science and Technology Agency (JST) | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | UTokyo Research掲載「次世代パワーデバイスの理想性能に近づく絶縁膜材料作製手法を開発」 URI: http://www.u-tokyo.ac.jp/ja/utokyo-research/research-news/advanced-dielectric-film-growth-technique-for-next-generation-power-devices/ | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | UTokyo Research "Advanced dielectric film growth technique for next generation power devices" URI: http://www.u-tokyo.ac.jp/en/utokyo-research/research-news/advanced-dielectric-film-growth-technique-for-next-generation-power-devices/ | |||||
書誌情報 |
Applied Physics Letters 巻 105, p. 032106, 発行日 2014-07-25 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0003-6951 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1077-3118 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1063/1.4891166 | |||||
権利 | ||||||
権利情報 | (c) 2014 AIP Publishing LLC | |||||
出版者 | ||||||
出版者 | AIP Publishing LLC | |||||
関係URI | ||||||
識別子タイプ | URI | |||||
関連識別子 | http://www.u-tokyo.ac.jp/ja/utokyo-research/research-news/advanced-dielectric-film-growth-technique-for-next-generation-power-devices/ | |||||
関係URI | ||||||
識別子タイプ | URI | |||||
関連識別子 | http://www.u-tokyo.ac.jp/en/utokyo-research/research-news/advanced-dielectric-film-growth-technique-for-next-generation-power-devices/ | |||||
関係URI | ||||||
識別子タイプ | URI | |||||
関連識別子 | http://scitation.aip.org/content/aip/journal/apl/105/3/10.1063/1.4891166 |